中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共12条,第1-10条 帮助

条数/页: 排序方式:
Use of electrochemistry in mini-/micro-LEDs and VCSELs 会议论文  OAI收割
Virtual, Online, 2022-02-20
作者:  
Kang, Jin-Ho;  Elafandy, Rami;  Li, Bingjun;  Song, Jie;  Han, Jung
  |  收藏  |  浏览/下载:26/0  |  提交时间:2022/07/14
Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes 期刊论文  OAI收割
Micromachines, 2018, 卷号: 9, 期号: 12, 页码: 9
作者:  
Zhou, S. J.;  Xu, H. H.;  Liu, M. L.;  Liu, X. T.;  Zhao, J.
  |  收藏  |  浏览/下载:21/0  |  提交时间:2019/09/17
An electrical-filtered optical heterodyne technique for tuning speed measurement of dbr lasers 期刊论文  iSwitch采集
Chinese science bulletin, 2011, 卷号: 56, 期号: 7, 页码: 704-708
作者:  
Man JiangWei;  Zhu NingHua;  Zhang HongGuang;  Sun Ke;  Ke JianHong
收藏  |  浏览/下载:30/0  |  提交时间:2019/05/12
An electrical-filtered optical heterodyne technique for tuning speed measurement of DBR lasers 期刊论文  OAI收割
chinese science bulletin, 2011, 卷号: 56, 期号: 7, 页码: 704-708
作者:  
Man JW;  Ke JH
收藏  |  浏览/下载:74/3  |  提交时间:2011/07/05
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文  OAI收割
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing)
收藏  |  浏览/下载:80/2  |  提交时间:2010/05/04
Narrow-linewidth microwave generation using a self-injected dbr laser diode 期刊论文  iSwitch采集
Ieee photonics technology letters, 2009, 卷号: 21, 期号: 15, 页码: 1045-1047
作者:  
Zhang, Hong Guang;  Zhu, Ning Hua;  Man, Jiang Wei;  Ke, Jian Hong;  Zhang, Bang Hong
收藏  |  浏览/下载:24/0  |  提交时间:2019/05/12
Narrow-Linewidth Microwave Generation Using a Self-Injected DBR Laser Diode 期刊论文  OAI收割
ieee photonics technology letters, 2009, 卷号: 21, 期号: 15, 页码: 1045-1047
作者:  
Man JW;  Ke JH
收藏  |  浏览/下载:120/4  |  提交时间:2010/03/08
Blue-violet lasing of optically pumped gan-based vertical cavity surface-emitting laser with dielectric distributed bragg reflectors 期刊论文  iSwitch采集
Journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59
作者:  
Zhang, Jiang-Yong;  Cai, Li-E;  Zhang, Bao-Ping;  Li, Shui-Qing;  Lin, Feng
收藏  |  浏览/下载:23/0  |  提交时间:2019/05/12
Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors 期刊论文  OAI收割
journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59
Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM
收藏  |  浏览/下载:175/53  |  提交时间:2010/03/08
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.