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	Strategies for high-performance perovskite solar cells from materials, film engineering to carrier dynamics and photon management 期刊论文 OAI收割 INFOMAT, 2022 作者: Li, Huilin; Chen, Chong; Hu, Hangyu; Li, Yu; Shen, Zhitao \| 收藏 \| 浏览/下载：44/0 \| 提交时间：2022/12/23 charge-carrier dynamic defect passivation perovskite solar cells photon management stability
	Introduction of 4-hydroxybenzaldehyde as interface modifier with multidimensional defects passivation effect for high-performance perovskite solar cells 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2021, 卷号: 570 作者: Wu, Weiwei; Xu, Huifen; Liu, Guozhen; Zheng, Haiying; Pan, Xu \| 收藏 \| 浏览/下载：85/0 \| 提交时间：2022/01/10 Perovskite solar cells Interface modification 4-hydroxybenzaldehyde Defect passivation Stability
	Anchoring CsPbI3 crystalline for stable and efficient perovskite solar cells with perfluorocarbon-assisted shield 期刊论文 OAI收割 SOLAR ENERGY, 2021, 卷号: 228 作者: Zhang, Liying; Liu, Boyuan; Xu, Xiaoxiao; Xu, Shendong; Du, Du \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2022/01/10 Perovskite solar cells Cesium lead iodide Perfluorocarbon Defect passivation Stability
	Efficient and Stable Inverted Perovskite Solar Cells Incorporating Secondary Amines 期刊论文 OAI收割 ADVANCED MATERIALS, 2019, 卷号: 31, 期号: 46 作者: Chen, Hao; Wei, Qi; Saidaminov, Makhsud, I; Wang, Fei; Johnston, Andrew \| 收藏 \| 浏览/下载：153/0 \| 提交时间：2019/12/31 defect density inverted structure perovskite solar cells secondary amine stability
	The structure properties, defect stability and excess properties in Am-doped LnPO(4) (Ln = La, Ce, Nd, Sm, Eu, Gd) monazites 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 806, 页码: 113-119 作者: Teng, Yuancheng; Yang, Xiaoyong; Wu, Lang; Wang, Lili; Zhang, Tongmin \| 收藏 \| 浏览/下载：93/0 \| 提交时间：2019/11/10 Monazite Am First principles calculations Defect stability Excess property
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Laser conditioning of ZrO2 : Y2O3/SiO2 mirror coatings prepared by E-beam evaporation 期刊论文 OAI收割 appl. surf. sci., 2005, 卷号: 239, 期号: 2, 页码: 171, 175 Zhao YN; Wang T; Zhang DP; Fan SH; 邵建达; 范正修收藏 \| 浏览/下载：1013/165 \| 提交时间：2009/09/22 laser conditioning laser-induced damage threshold stability of defects absorbance defect damage morphology
	A study of the passive films on chromium by capacitance measurement 期刊论文 OAI收割 Corrosion Science, 2003, 卷号: 45, 期号: 4, 页码: 747-758 D. S. Kong; S. H. Chen; C. Wang; W. Yang 收藏 \| 浏览/下载：14/0 \| 提交时间：2012/04/14 chromium passive film capacitance acceptor density flatband potential specific adsorption electron-transfer reactions semiconducting properties stainless-steels alloying elements defect structure iron impedance ellipsometry stability surfaces