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Annealing Treatment and Basketweave Structure Deformation Mechanism of Laser Deposition Manufactured TA15 Titanium Alloy 期刊论文 OAI收割
RARE METAL MATERIALS AND ENGINEERING, 2017, 卷号: 46, 期号: 7, 页码: 1935-1942
作者: Yang Guang; Wang Wendong; Qin Lanyun; Ren Yuhang; Li Changfu

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收藏 | 浏览/下载：22/0 | 提交时间：2021/02/02

HEAT-TREATMENT MICROSTRUCTURE TEMPERATURES laser deposition manufacturing alpha plus beta phase zone annealing treatment microstructure mechanical properties

Effect of Annealing Treatment and Deposition Direction on Microstructures and Mechanical Properties of Laser Deposition Manufactured TA15 Titanium Alloy 期刊论文 OAI收割
RARE METAL MATERIALS AND ENGINEERING, 2016, 卷号: 45, 期号: 12, 页码: 3295-3301
作者: Yang Guang; Wang Wendong; Qin Lanyun; Li Changfu; Ren Yuhang

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收藏 | 浏览/下载：13/0 | 提交时间：2021/02/26

HEAT-TREATMENT TEMPERATURES laser deposition manufacturing TA15 titanium alloy annealing temperature microstructure anisotropy

Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者: Zhang T.

收藏 | 浏览/下载：34/0 | 提交时间：2013/03/25

InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.

The interpretation of X-ray diffraction from the pyrocarbon in carbon/carbon composites with comparison of TEM observations 期刊论文 OAI收割
Philosophical Magazine, 2012, 卷号: 92, 期号: 10, 页码: 1198-1211
G. H. Zhou; S. Yu; L. L. He; Q. G. Guo; H. Q. Ye

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X-ray diffraction TEM carbon/carbon composite chemical-vapor infiltration carbon-fiber felts pyrolytic carbon mechanical-properties c/c composites microstructure temperatures deposition morphology matrices

Effect of electrodeposition parameters on the hydrogen permeation during Cu-Sn alloy electrodeposition 期刊论文 OAI收割
Electrochimica Acta, 2010, 卷号: 55, 期号: 7, 页码: 2238-2245
G. Z. Meng; F. L. Sun; S. J. Wang; Y. W. Shao; T. Zhang; F. H. Wang

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Cu-Sn alloy coating Hydrogen blister Hydrogen permeation Hydrogen diffusivity Pulse current electrodeposition pyrophosphate-based electrolytes different temperatures ph-microscopy carbon-steel thin-films iron electromigration deposition metals interconnects

Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4 期刊论文 OAI收割
Journal of Materials Science & Technology, 2008, 卷号: 24, 期号: 5, 页码: 690-692
H. Cheng; A. M. Wu; N. L. Shi; L. S. Wen

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Ar flow rate ECR-PECVD Poly-Si Thin Films chemical-vapor-deposition microcrystalline silicon low-temperatures plasma growth transition hydrogen

Temperature fields of 355 nm HR coatings based on the interface absorption model 期刊论文 OAI收割
j. phys. d-appl. phys., 2008, 卷号: 41, 期号: 4, 页码: 45306
占美琼; 邵建达

收藏 | 浏览/下载：1026/222 | 提交时间：2009/09/22

Damage mechanism Deposition temperatures Extinction coefficient High reflectance coating Interface absorption models

Chemisorptions of atomic oxygen and its replacement by hydrogen on the diamond (100) surface studied by first principles 期刊论文 OAI收割
Surface Review and Letters, 2006, 卷号: 13, 期号: 1, 页码: 45-49
Z. G. Wang; X. T. Zu; J. L. Nie; H. Y. Xiao

收藏 | 浏览/下载：17/0 | 提交时间：2012/04/14

first principles calculation diamond (100) surface oxidation replacement alkaline steam oxidation pseudopotentials 300-degrees-c temperatures preoxidation desorption deposition adsorption density

Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 OAI收割
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
作者: Liu L.; Liu L.; Wang W.; Wang W.

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Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.

Preparation of TiN films by arc ion plating using dc and pulsed biases 期刊论文 OAI收割
Journal of Vacuum Science & Technology A, 2004, 卷号: 22, 期号: 2, 页码: 250-254
M. D. Huang; Y. P. Lee; C. Dong; G. Q. Lin; C. Sun; L. S. Wen

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plated tin deposition coatings voltage temperatures bombardment evaporation hard