中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
Implication of Blocking Layer Functioning with the Effect of Temperature in Dye-Sensitized Solar Cells 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 6, 页码: 5714-5718
作者:  
Kou, Dongxing;  Chen, Shuanghong;  Hu, Linhua;  Wu, Sixin;  Dai, Songyuan
收藏  |  浏览/下载:20/0  |  提交时间:2017/07/24
Tuning the Thickness of Ba-Containing "Functional" Layer toward High-Performance Ceria-Based Solid Oxide Fuel Cells 期刊论文  OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 17, 页码: 10835-10840
作者:  
Gong, Zheng;  Sun, Wenping;  Shan, Duo;  Wu, Yusen;  Liu, Wei
收藏  |  浏览/下载:24/0  |  提交时间:2017/11/10
Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs 期刊论文  OAI收割
JOURNAL OF DISPLAY TECHNOLOGY, 2014, 卷号: 10, 期号: 2, 页码: 146
Lu, TP; Ma, ZG; Du, CH; Fang, YT; Chen, FS; Jiang, Y; Wang, L; Jia, HQ; Chen, H
收藏  |  浏览/下载:36/0  |  提交时间:2015/04/14
Optimized growth of p-type algan electron blocking layer in the gan-based led 期刊论文  iSwitch采集
Acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: 6
作者:  
Wang Bing;  Li Zhi-Cong;  Yao Ran;  Liang Meng;  Yan Fa-Wang
收藏  |  浏览/下载:44/0  |  提交时间:2019/05/12
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108
作者:  
Wang B;  Li ZC;  Yao R
  |  收藏  |  浏览/下载:114/5  |  提交时间:2011/07/05