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	Surface step decoration of isolated atom as electron pumping: atomic-level insights into visible-light hydrogen evolution 期刊论文 iSwitch采集 Nano energy, 2018, 卷号: 45, 页码: 109-117 作者: Wu, Xin; Zhang, Huabin; Dong, Juncai; Qiu, Mei; Kong, Jintao 收藏 \| 浏览/下载：121/0 \| 提交时间：2019/04/23 Isolated atom Surface step Hydrogen evolution Electron pumping Catalysis
	Surface step decoration of isolated atom as electron pumping: Atomic-level insights into visible-light hydrogen evolution 期刊论文 OAI收割 NANO ENERGY, NANO ENERGY, 2018, 2018, 卷号: 45, 45, 页码: 109-117, 109-117 作者: Wu, X; Zhang, HB; Dong, JC; Qiu, M; Kong, JT \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/09/24 Isolated atom Isolated atom Surface step Hydrogen evolution Electron pumping Catalysis Surface step Hydrogen evolution Electron pumping Catalysis
	Optical pumping and population transfer of nuclear-spin states of caesium atoms in high magnetic fields 期刊论文 OAI收割 CHINESE PHYSICS, 2007, 卷号: 16, 期号: 4, 页码: 998-1007 作者: Luo Jun; Su Xian-Ping; Zeng Xi-Zhi; Zhan Ming-Sheng 收藏 \| 浏览/下载：30/0 \| 提交时间：2015/10/13 high magnetic field optical pumping hyperfine interaction changing nuclear-spin and electron spin state
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.