机构

• 国家空间科学中心 [1]
• 长春光学精密机械与物... [1]
• 微电子研究所 [1]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [2]
• 会议论文 [1]
• 外文期刊 [1]

发表日期

• 2009 [2]
• 2007 [1]
• 2006 [1]

学科主题

• 空间技术 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Low-Voltage Organic Field-Effect Transistor With PMMA/ZrO2 Bilayer Dielectric 外文期刊  OAI收割 2009 作者:  Shang, LW;  Tu, DY;  Liu, G;  Liu, XH;  Ji, ZY   |  收藏  |  浏览/下载：18/0  |  提交时间：2010/11/26 Thin-film Transistors  Copper Phthalocyanine  High-mobility  Gate Insulators  Substrate  Fets   Very low hysteresis organic thin-film transistors 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 8, 页码: 文献编号：085009 Li CH; Pan F; Zhu F; Song D; Wang H; Yan DH 收藏  |  浏览/下载：31/0  |  提交时间：2010/05/04 FIELD-EFFECT TRANSISTORS  ACTIVE-MATRIX DISPLAYS  GATE INSULATORS  DIELECTRICS  FABRICATION  DRIVEN  LAYERS  OXID   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   Structural and electrical analysis of S+ ion bombarded p-InP(100) 期刊论文  OAI收割 Applied Surface Science, 2006, 卷号: 253, 期号: 3, 页码: 1356-1364 Zhao, Q.; Zhai, G. J.; Kwok, R. W. M. 收藏  |  浏览/下载：33/0  |  提交时间：2014/04/30 InP  ion beam bombardment  sulfur passivation  XPS  LEED  passivated inp(100)-(1x1) surface  ray photoelectron-spectroscopy  (nh4)2sx-treated gaas 100  p3n5 gate insulators  sulfide passivation  sulfur passivation  electronic states  sinx/inp interface  ab-initio  inp