中国科学院机构知识库网格系统: 检索

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中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

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	2000-2-1 Growth and characterization of strained superlattices delta-ganxas1-x/gaas by molecular beam epitaxy 期刊论文 iSwitch采集 Journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652 Pan, z() 收藏 \| 浏览/下载：43/0 \| 提交时间：2019/05/12 Ganas/gaas superlattice X-ray diffraction Periodicity fluctuation Mbe Rheed
	2000 Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652 Pan Z; Li LH; Lin YW; Zhou ZQ; Zhang W; Wang YT; Wu RH; pan z,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. 收藏 \| 浏览/下载：76/0 \| 提交时间：2010/08/12 GaNAs/GaAs superlattice X-ray diffraction periodicity fluctuation MBE RHEED BAND-GAP ENERGY NITROGEN ALLOYS DIFFRACTION COEFFICIENT SOLUBILITY OPERATION GAAS1-XNX GAASN