中国科学院机构知识库网格系统: 检索

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	Strontium isotopes in high- and low-Ge coals from the Shengli Coalfield, Inner Mongolia, northern China: New indicators for Ge source 期刊论文 OAI收割 INTERNATIONAL JOURNAL OF COAL GEOLOGY, 2021, 卷号: 233, 页码: 11 作者: Liu, Jingjing; Spiro, Baruch F.; Dai, Shifeng; French, David; Graham, Ian T. \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2021/10/08 Germanium in coal Strontium isotopes Wulantuga Ge deposit Grantic Ge source
	Mesoporous GeOx/Ge/C as a Highly Reversible Anode Material with High Specific Capacity for Lithium-Ion Batteries 期刊论文 OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12, 期号: 41, 页码: 47002-47009 作者: Hohn, Nuri; Wang, Xiaoyan; Giebel, Michael A.; Yin, Shanshan; Mueller, David \| 收藏 \| 浏览/下载：48/0 \| 提交时间：2020/12/16 ONE-POT SYNTHESIS CARBON NANOCOMPOSITE GERMANIUM SILICON GE PERFORMANCE CHEMISTRY
	Germanium nanoparticles supported by 3D ordered macroporous nickel frameworks as high-performance free-standing anodes for Li-ion batteries 期刊论文 OAI收割 CHEMICAL ENGINEERING JOURNAL, 2018, 卷号: 354, 期号: -, 页码: 616-622 作者: Liu, X; Liu, YS; Harris, MM; Li, JH; Wang, KX \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2019/12/17 HIGH-CAPACITY INVERSE OPAL MESOPOROUS GERMANIUM SCALABLE SYNTHESIS LITHIUM BATTERIES STORAGE DEVICES GE CARBON ELECTRODES PARTICLES
	Stability, bonding, and electronic properties of silicon and germanium arsenides 期刊论文 OAI收割 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 卷号: 253, 期号: 5, 页码: 862-867 作者: Wu, Ping; Huang, Min 收藏 \| 浏览/下载：20/0 \| 提交时间：2016/07/12 computational physics density-functional theory electronic structure germanium arsenide Si/Ge vacancy silicon arsenide
	Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文 OAI收割 journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46 Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM 收藏 \| 浏览/下载：94/4 \| 提交时间：2011/07/05 Thermal stability Molecular beam epitaxy Germanium tin alloys Germanium MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE SEMICONDUCTORS GE(001)2X1
	Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates 期刊论文 OAI收割 NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 11, 页码: - Chen, YH; Li, C; Lai, HK; Chen, SY 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/03/24 GERMANIUM GE RECOMBINATION SI(100) LAYERS SI
	Effect of ge phase on thermoelectrical properties of sr8ga16ge30 clathrate 期刊论文 iSwitch采集 Rare metal materials and engineering, 2009, 卷号: 38, 页码: 678-680 作者: Wang Li; Zhao Degang; Hou Xiaowei; Shi Xiaoya; Sun Zhengliang 收藏 \| 浏览/下载：34/0 \| 提交时间：2019/05/10 Clathrate structure Thermoelectric properties Germanium (ge)
	Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3 作者: Chen, Yanghua; Li, Cheng; Zhou, Zhiwen; Lai, Hongkai; Chen, Songyan 收藏 \| 浏览/下载：70/0 \| 提交时间：2019/05/12 Chemical vapour deposition Elemental semiconductors Energy gap Germanium Ge-si alloys Photoluminescence Semiconductor epitaxial layers Semiconductor quantum wells Silicon Tensile strength
	Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏 \| 浏览/下载：103/14 \| 提交时间：2010/03/08 chemical vapour deposition elemental semiconductors energy gap germanium Ge-Si alloys photoluminescence semiconductor epitaxial layers semiconductor quantum wells silicon tensile strength