中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure 期刊论文  OAI收割
Journal of Luminescence, 2011, 卷号: 131, 期号: 4, 页码: 825-828
J. C. Sun; Q. J. Feng; J. M. Bian; D. Q. Yu; M. K. Li; C. R. Li; H. W. Liang; J. Z. Zhao; H. Qiu; G. T. Du
收藏  |  浏览/下载:22/0  |  提交时间:2012/04/13
Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文  iSwitch采集
Optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
作者:  
Zhou, Zhiwen;  He, Jingkai;  Wang, Ruichun;  Li, Cheng;  Yu, Jinzhong
收藏  |  浏览/下载:41/0  |  提交时间:2019/05/12
Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文  OAI收割
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:93/0  |  提交时间:2010/08/17