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CAS IR Grid
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半导体研究所 [2]
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Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates
期刊论文
OAI收割
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
作者:
Dong C(董琛)
;
Han XX(韩修训)
;
Gao, Xin
;
Yoshio Ohshita
;
Masafumi Yamaguchi
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2015/12/30
GaAsN
Schottky diode
Growth orientation
I-V characteristics
C-V characteristics
Electrical properties
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
会议论文
OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:
Zhang T.
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn
TMGa
AsH3
and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power
their temperatures were detected by a thermocouple
and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm
In0.82Ga0.18As absorption layer with the thickness of 2.8 m
and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied
the curves of the I-V characteristics
the range of response spectrum
and the detectivity (D*) were obtained. (2013) Trans Tech Publications
Switzerland.
Effect of cathode shape on vertical buffered electropolishing for niobium SRF cavities
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2013, 卷号: 280, 页码: 93-103
作者:
Jin, S
;
Wu, AT
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2016/04/08
Niobium SRF cavities
Buffered electropolishing
Electropolishing
I-V characteristics
Influence of substrate on coupling of high temperature superconducting Josephson junction arrays
期刊论文
OAI收割
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2012, 卷号: 483, 期号: 14, 页码: 97-100
作者:
Wang, P.
;
Wang, Zh.
;
Fan, B.
;
Xie, W.
;
Liu, W.
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/01/31
HTS JJAs
I-V characteristics
Substrate
Radiation
Electromagnetic simulation
Transient voltage-current characteristics: New insights into plasma electrolytic oxidation process of aluminium alloy
期刊论文
OAI收割
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2012, 卷号: 7, 期号: 8, 页码: 7619-7630
作者:
Duan HP(段红平)
;
Li YC
;
Xia Y(夏原)
;
Chen SH(陈少华)
;
Duan, HP
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2013/01/18
Plasma electrolytic oxidation
Aluminium
Transient V-I characteristics
Semiconducting properties
Schottky Barrier Diode
Semiconductor Properties
Valve Metals
Coatings
Films
Electrodes
Growth
Az91D
Dependence of the electrical and optical properties on growth interruption in alas/in0.53ga0.47as/inas resonant tunneling diodes
期刊论文
iSwitch采集
Nanoscale research letters, 2011, 卷号: 6, 期号: 1
作者:
Zhang,Yang
;
Guan,Min
;
Liu,Xingfang
;
Zeng,Yiping
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Resonant tunneling diode
I-v characteristics
Molecular beam epitaxy
Recent advances in synthesis, physical properties and applications of conducting polymer nanotubes and nanofibers
期刊论文
OAI收割
PROGRESS IN POLYMER SCIENCE, 2011, 卷号: 36, 期号: 10, 页码: 1415
Long, YZ
;
Li, MM
;
Gu, CZ
;
Wan, MX
;
Duvail, JL
;
Liu, ZW
;
Fan, ZY
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2013/09/24
CURRENT-VOLTAGE CHARACTERISTICS
LIGHT-EMITTING-DIODES
ASSEMBLED POLYANILINE NANOSTRUCTURES
ATOMIC-FORCE MICROSCOPY
TEMPLATE-FREE METHOD
I-V CHARACTERISTICS
ELECTRICAL-CONDUCTIVITY
POLYPYRROLE NANOTUBE
CHARGE-TRANSPORT
LOW-TEMPERATURE
Current-Voltage Characteristics in Individual Polypyrrole Nanotube, Poly(3,4-ethylenedioxythiophene) Nanowire, Polyaniline Nanotube, and CdS Nanorope
期刊论文
OAI收割
Nanoscale Research Letters, 2009, 卷号: 4, 期号: 1, 页码: 63-69
作者:
Yin, Zhi-Hua
;
Long, Yun-Ze
;
Gu, Chang-Zhi
;
Wan, Mei-Xiang
;
Duvail, Jean-Luc
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/04/09
Conducting Polymers
I-v Characteristics
Fit Model
Nanowires/tubes
Resonant tunnelling of electrons in multi-step single-barrier heterostructures
期刊论文
OAI收割
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 9, 页码: 2120-2124
Wang, C
;
Zhang, YH
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2012/03/24
I-V CHARACTERISTICS
QUASI-BOUND STATES
TERAHERTZ RADIATION
FIELD
BISTABILITY
SIMULATION
TRANSVERSE
TRANSPORT
COHERENT
PHYSICS
Space-charge-limited currents in gan schottky diodes
期刊论文
iSwitch采集
Solid-state electronics, 2005, 卷号: 49, 期号: 5, 页码: 847-852
作者:
Shen, XM
;
Zhao, DG
;
Liu, ZS
;
Hu, ZF
;
Yang, H
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
Gan
Schottky diode
I-v characteristics
Space-charge-limited current