中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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半导体研究所 [23]
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期刊论文 [42]
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Improvement in the charge dissipation performance of epoxy resin composites by incorporating amino-modified boron nitride nanosheets
期刊论文
OAI收割
Materials Letters, 2021, 卷号: 298
作者:
He, Shaojian
;
Luo, Chumeng
;
Zheng, Youzhe
;
Xue, Yang
;
Song, Xupeng
  |  
收藏
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浏览/下载:0/0
  |  
提交时间:2023/06/21
Nanosheets - Nitrides - Urea - Fillers - Boron nitride - III-V semiconductors
Investigation of native defects and impurities in X-N (X = Al, Ga, In)
期刊论文
OAI收割
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 188, 页码: 9
作者:
Chen, Yingjie
;
Wu, Liyuan
;
Liang, Dan
;
Lu, Pengfei
;
Wang, Jianjun
  |  
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/01
Group III nitrides
First-principles
Bulk modulus
Defect levels
Formation energies
Improved thermal conductivity of styrene acrylic resin with carbon nanotubes, graphene and boron nitride hybrid fillers
期刊论文
OAI收割
Carbon Resources Conversion, 2021, 卷号: 4, 页码: 190-196
作者:
Jia, Fuhua
;
Fagbohun, Emmanuel Oluwaseyi
;
Wang, Qianyu
;
Zhu, Duoyin
;
Zhang, Jianling
  |  
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2023/06/21
Aggregates - Nitrides - Boron nitride - Temperature - Graphene - III-V semiconductors - Multiwalled carbon nanotubes (MWCN) - Resins - Fillers - Gas emissions - Thermal conductivity
Structural stability and electronic properties of the (0001) inversion domain boundary in III-nitrides
期刊论文
OAI收割
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 154, 页码: 152-158
作者:
Li, Siqian
;
Lei, Huaping
;
Anglade, Pierre-Matthieu
;
Chen, Jun
;
Ruterana, Pierre
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收藏
  |  
浏览/下载:55/0
  |  
提交时间:2019/12/20
Inversion domain boundary (IDB)
Group III-nitrides
DFT
Chemical bonding
Electronic structure
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 51-55
作者:
Zhou, K(周堃)
;
Ikeda, M
;
Liu, JP(刘建平)
;
Zhang, SM(张书明)
;
Li, ZC(李增成)
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2015/02/03
Growth models
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting III-V materials
Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 416, 页码: 7
作者:
Zhou, K(周堃)
;
Liu, JP(刘建平)
;
Ikeda, M
;
Zhang, SM(张书明)
;
Li, DY(李德尧)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2015/12/31
Surface structure
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting III-V materials
Structural modifications of AlInN/GaN thin films by neon ion implantation
期刊论文
OAI收割
PHYSICS LETTERS A, 2013, 卷号: 377, 期号: 41, 页码: 2986-2989
Majid, A
;
Husnain, G
;
Usman, M
;
Shakoor, A
;
Hassan, N
;
Zhu, JJ(朱建军)
收藏
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浏览/下载:30/0
  |  
提交时间:2014/01/15
Implantation
Defects
III-nitrides
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 期号: 0, 页码: 7-10
作者:
Li, DY(李德尧)
;
Zhang, SM(张书明)
;
Liu, JP(刘建平)
;
Zhang, LQ(张立群)
;
Yang, H(杨辉)
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2014/01/13
Surface structure
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting III-V materials
A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector
期刊论文
OAI收割
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5
作者:
Zhang, SM (张书明)
;
Zhang, BS (张宝顺)
;
Yang, H (杨辉)
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/08/24
SURFACE PHOTOVOLTAGE SPECTROSCOPY
III-NITRIDES
A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 53701
Zhao DG
;
Zhang S
;
Jiang DS
;
Zhu JJ
;
Liu ZS
;
Wang H
;
Zhang SM
;
Zhang BS
;
Yang H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
SURFACE PHOTOVOLTAGE SPECTROSCOPY
III-NITRIDES