机构

• 半导体研究所 [10]
• 金属研究所 [6]
• 过程工程研究所 [5]
• 力学研究所 [2]
• 长春光学精密机械与物... [2]
• 宁波材料技术与工程研... [1]
• 更多

采集方式

• OAI收割 [26]
• iSwitch采集 [5]

内容类型

• 期刊论文 [27]
• 会议论文 [4]

发表日期

• 2022 [1]
• 2021 [2]
• 2019 [2]
• 2018 [1]
• 2017 [1]
• 2016 [2]
• 更多

学科主题

• 半导体材料 [5]
• Aluminum O... [1]
• Epoxy Resi... [1]
• Physics [1]
• Silicon Ca... [1]
• Styrene [1]
• 更多

筛选

浏览/检索结果: 共31条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Process mechanism of aluminum extraction from secondary aluminum dross by roasting with ammonium sulfate 期刊论文  OAI收割 Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals, 2022, 卷号: 32, 期号: 5, 页码: 1418-1429 作者:  Lei, Bing-Hong;  Liu, Hong-Hui;  Zhang, Hong-Ling;  Zhang, Di;  Dong, Yu-Ming   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Alumina - Aluminum hydroxide - Aluminum nitride - Ammonia - Calcination - Calcium fluoride - Decomposition - Fluorspar - III-V semiconductors - Infrared spectroscopy - Sodium compounds - Zinc sulfide   Improvement in the charge dissipation performance of epoxy resin composites by incorporating amino-modified boron nitride nanosheets 期刊论文  OAI收割 Materials Letters, 2021, 卷号: 298 作者:  He, Shaojian;  Luo, Chumeng;  Zheng, Youzhe;  Xue, Yang;  Song, Xupeng   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/21 Nanosheets - Nitrides - Urea - Fillers - Boron nitride - III-V semiconductors   Improved thermal conductivity of styrene acrylic resin with carbon nanotubes, graphene and boron nitride hybrid fillers 期刊论文  OAI收割 Carbon Resources Conversion, 2021, 卷号: 4, 页码: 190-196 作者:  Jia, Fuhua;  Fagbohun, Emmanuel Oluwaseyi;  Wang, Qianyu;  Zhu, Duoyin;  Zhang, Jianling   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/21 Aggregates - Nitrides - Boron nitride - Temperature - Graphene - III-V semiconductors - Multiwalled carbon nanotubes (MWCN) - Resins - Fillers - Gas emissions - Thermal conductivity   Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement 期刊论文  OAI收割 NANOTECHNOLOGY, 2019, 卷号: 30, 期号: 43 作者:  Xu, Houqiang;  Long, Hanling;  Jiang, Jie'an;  Sheikhi, Moheb;  Li, Liang   |  收藏  |  浏览/下载：65/0  |  提交时间：2019/12/18 III-NITRIDE BLUE  EMITTING-DIODES  OPTICAL-PROPERTIES  ALN  SURFACE  BUFFER  MQWS  LEDS  GAN   Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文  OAI收割 Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133 作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi   |  收藏  |  浏览/下载：51/0  |  提交时间：2020/08/24 Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors   Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704 作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/09/17 Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion   Growth of Hexagonal AlN Crystalline Microrod by Physical Vapor Transport Method 期刊论文  OAI收割 JOURNAL OF INORGANIC MATERIALS, 2017, 卷号: 32, 期号: 2, 页码: 215-218 作者:  Wang Hua-Jie;  Liu Xue-Chao;  Kong Hai-Kuan;  Xin Jun;  Gao Pan 收藏  |  浏览/下载：22/0  |  提交时间：2017/05/05 III-V semiconductors  aluminum nitride  hexagonal microrod  physical vapor transport   Deep UV resonance Raman spectroscopic study on electron-phonon coupling in hexagonal III-nitride wide bandgap semiconductors 期刊论文  OAI收割 JOURNAL OF RAMAN SPECTROSCOPY, 2016, 卷号: 47, 期号: 8, 页码: 884-887 作者:  Feng, Zhaochi;  Li, Can;  Jin, Shaoqing;  Zhang, Ying;  Fan, Fengtao   |  收藏  |  浏览/下载：19/0  |  提交时间：2019/06/20 Deep Uv  Resonance Raman  Hexagonal Iii-nitride  Wide Bandgap Semiconductors  Electron-phonon Coupling   Deep uv resonance raman spectroscopic study on electron-phonon coupling in hexagonal iii-nitride wide bandgap semiconductors 期刊论文  iSwitch采集 Journal of raman spectroscopy, 2016, 卷号: 47, 期号: 8, 页码: 884-887 作者:  Jin, Shaoqing;  Zhang, Ying;  Fan, Fengtao;  Feng, Zhaochi;  Li, Can 收藏  |  浏览/下载：38/0  |  提交时间：2019/05/09 Deep uv  Resonance raman  Hexagonal iii-nitride  Wide bandgap semiconductors  Electron-phonon coupling   Studies of Physical and Chemical Properties of Two-Dimensional Hexagonal Crystals by First-Principles Calculation 期刊论文  OAI收割 Journal of the Physical Society of Japan, 2010, 卷号: 79, 期号: 6 S. Q. Wang 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/13 2D crystals  orbital hybridization  elastic moduli  first-principles  calculation  iii-v compounds  elastic-constants  silicon-nitride  graphene  pseudopotentials  membranes  graphite  phase