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浏览/检索结果: 共116条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors 期刊论文  OAI收割 Chemical Communications, 2022, 卷号: 58, 期号: 61, 页码: 8548-8551 作者:  Dou, Yi;  Liang, Yujun;  Li, Haoran;  Xue, Yali;  Ye, Hanlin   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Electric fields - Heterojunctions - III-V semiconductors - Photodetectors - Photons   Low-Temperature As-Doped In2O3Nanowires for Room Temperature NO2Gas Sensing 期刊论文  OAI收割 ACS Applied Nano Materials, 2022, 卷号: 5, 期号: 6, 页码: 7983-7992 作者:  Wang, Hang;  Fan, Guijun;  Yang, Zaixing;  Han, Ning;  Chen, Yunfa   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Catalysts - Chemical sensors - Chemical vapor deposition - CMOS integrated circuits - Copper oxides - Crystalline materials - Gas detectors - Gas sensing electrodes - III-V semiconductors - Indium arsenide - MOS devices - Oxide semiconductors - Temperature   Process mechanism of aluminum extraction from secondary aluminum dross by roasting with ammonium sulfate 期刊论文  OAI收割 Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals, 2022, 卷号: 32, 期号: 5, 页码: 1418-1429 作者:  Lei, Bing-Hong;  Liu, Hong-Hui;  Zhang, Hong-Ling;  Zhang, Di;  Dong, Yu-Ming   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/26 Alumina - Aluminum hydroxide - Aluminum nitride - Ammonia - Calcination - Calcium fluoride - Decomposition - Fluorspar - III-V semiconductors - Infrared spectroscopy - Sodium compounds - Zinc sulfide   Improvement in the charge dissipation performance of epoxy resin composites by incorporating amino-modified boron nitride nanosheets 期刊论文  OAI收割 Materials Letters, 2021, 卷号: 298 作者:  He, Shaojian;  Luo, Chumeng;  Zheng, Youzhe;  Xue, Yang;  Song, Xupeng   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/21 Nanosheets - Nitrides - Urea - Fillers - Boron nitride - III-V semiconductors   Improved thermal conductivity of styrene acrylic resin with carbon nanotubes, graphene and boron nitride hybrid fillers 期刊论文  OAI收割 Carbon Resources Conversion, 2021, 卷号: 4, 页码: 190-196 作者:  Jia, Fuhua;  Fagbohun, Emmanuel Oluwaseyi;  Wang, Qianyu;  Zhu, Duoyin   |  收藏  |  浏览/下载：0/0  |  提交时间：2023/06/21 Aggregates - Nitrides - Boron nitride - Temperature - Graphene - III-V semiconductors - Multiwalled carbon nanotubes (MWCN) - Resins - Fillers - Gas emissions - Thermal conductivity   Temperature-dependent analysis of solid-state photon-enhanced thermionic emission solar energy converter 期刊论文  OAI收割 Energies, 2020, 卷号: 13, 期号: 7 作者:  Yang, Yang;  Cao, WeiWei;  Xu, Peng;  Zhu, Bing Li;  Bai, Yong Lin   |  收藏  |  浏览/下载：22/0  |  提交时间：2020/04/27 photon-enhanced thermionic emission  temperature dependence  solid-state device  solar cell  III–V semiconductors   Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band 期刊论文  OAI收割 Light: Science and Applications, 2019, 卷号: 8, 期号: 1 作者:  H.-Y.Lu;  S.-C.Tian;  C.-Z.Tong;  L.-J.Wang;  J.-M.Rong   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers   High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang   |  收藏  |  浏览/下载：29/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文  OAI收割 Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133 作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi   |  收藏  |  浏览/下载：50/0  |  提交时间：2020/08/24 Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors   Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array 期刊论文  OAI收割 Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 9 作者:  Ban, Zhang;  Liang, Jingqiu;  Lu, Jinguang;  Li, Yang   |  收藏  |  浏览/下载：47/0  |  提交时间：2019/09/17 Flip chip devices  Aluminum alloys  Copper  Diodes  Energy utilization  Gallium alloys  Heat convection  Heat resistance  III-V semiconductors  Indium alloys  Light emitting diodes  Microchannels  Numerical methods  Optical devices  Photoelectricity  Polydimethylsiloxane  Semiconductor alloys  Silicones  Temperature