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浏览/检索结果: 共8条，第1-8条 帮助

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Study on the Guiding Mechanism of Multiple and Empty Holes Under Explosion Load 期刊论文  OAI收割
MINING METALLURGY & EXPLORATION, 2023, 页码: 10
作者:  Cao, Ruyang;  Li, Yunpeng;  Feng, Chun;  Zhang, Yiming;  Feng C(冯春)
  |  收藏  |  浏览/下载：18/0  |  提交时间：2024/01/22
Pyrene-Based Blue AIEgen: Enhanced Hole Mobility and Good EL Performance in Solution-Processed OLEDs 期刊论文  OAI收割
MOLECULES, 2017, 卷号: 22, 期号: 12
作者:  Yang, Jie;  Qin, Jianwen;  Ren, Zichun;  Peng, Qian;  Xie, Guohua
  |  收藏  |  浏览/下载：25/0  |  提交时间：2019/04/09
Plasmon-induced hole-depletion layer on hematite nanoflake photoanodes for highly efficient solar water splitting 期刊论文  OAI收割
Nano Energy, 2017, 卷号: 35, 页码: 171-178
作者:  Wang L(王蕾);  Hu HY(胡红岩);  Nhat Truong Nguyen;  Zhang YJ(张亚军);  Patrik Schmuki
收藏  |  浏览/下载：34/0  |  提交时间：2017/08/28
Measurement-induced-nonlocality for Dirac particles in Garfinkle-Horowitz-Strominger dilation space-time 期刊论文  OAI收割
PHYSICS LETTERS B, 2016, 卷号: 756, 期号: 无, 页码: 278-282
作者:  He, Juan;  Xu, Shuai;  Ye, Liu
收藏  |  浏览/下载：28/0  |  提交时间：2017/07/26
Solution-Processable Hole-Generation Layer and Electron-Transporting Layer: Towards High-Performance, Alternating-Current-Driven, Field-Induced Polymer Electroluminescent Devices 期刊论文  OAI收割
ADVANCED FUNCTIONAL MATERIALS, 2014, 卷号: 24, 期号: 18, 页码: 2677-2688
作者:  Chen, Yonghua;  Xia, Yingdong;  Smith, Gregory M.;  Sun, Hengda;  Yang, Dezhi
  |  收藏  |  浏览/下载：19/0  |  提交时间：2019/04/09
A study of optical properties of a four-level atomic system via vacuum-induced coherence effects 期刊论文  OAI收割
CHINESE PHYSICS B, 2010, 卷号: 19, 页码: 5
作者:  Chen Jun;  Liu Zheng-Dong;  Zheng Jun;  Pang Wei;  You Su-Ping
  |  收藏  |  浏览/下载：15/0  |  提交时间：2018/05/31
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
The hole burning and optical bistability of quasi-Lambda-type four-level atom system 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2006, 卷号: 55, 页码: 6410-6413
作者:  Chen Jun;  Liu Zheng-Dong;  You Su-Ping
  |  收藏  |  浏览/下载：15/0  |  提交时间：2018/05/31