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	Temperature characteristics of high power vertical cavity surface emitting lasers (EI CONFERENCE) 会议论文 OAI收割 Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China 作者: Qin L. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 By using oxidation confinement technology high power vertical-cavity surface-emitting lasers are fabricated in experiment. The electrical and optical performance characteristics such as threshold current efficiency emission wavelength and output power are measured under continuous wave (CW) condition at room temperature. The maximum output power is up to watt regime at wavelength of about 980nm. The temperature characteristics of the device are investigated experimentally in detail. The variation in lasing threshold current with temperature is studied. The characteristic temperature T0 of the device is derived and the value is about 211K. Such a high characteristic temperature T0 of threshold current can lead to good temperature sensitivity of the device. At the same time the lasing spectrum characteristics with temperature are also measured. The wavelength shift with temperature is just about 0.06nm/K. From the measured results it is shown that the device can still operate at high temperature condition.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏 \| 浏览/下载：75/0 \| 提交时间：2010/08/12 1.3 MU-M MOLECULAR-BEAM EPITAXY TEMPERATURE-DEPENDENCE LASING CHARACTERISTICS LASERS WAVELENGTH SEPARATION LINEWIDTH PROPERTY GAIN
	Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358 作者: Xu B; Jiang DS; Wang ZG 收藏 \| 浏览/下载：97/7 \| 提交时间：2010/08/12 nanostructures molecular beam epitaxy semiconductor III-V materials laser diodes 1.3 MU-M CONTINUOUS-WAVE OPERATION TEMPERATURE-DEPENDENCE LASING CHARACTERISTICS 1.3-MU-M PHOTOLUMINESCENCE GAIN