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Stability of macroinvertebrate communities in a newly formed large reservoir with recurrent impoundment events 期刊论文  OAI收割
QUATERNARY INTERNATIONAL, 2017, 卷号: 440, 期号: 1, 页码: 71-77
作者:  
Li, Bin;  Tang, Tao;  Cai, Qinghua;  Zhang, Min;  Dong, Xiaoyu
  |  收藏  |  浏览/下载:25/0  |  提交时间:2019/09/19
Analysis of EDZ Development of Columnar Jointed Rock Mass in the Baihetan Diversion Tunnel 期刊论文  OAI收割
ROCK MECHANICS AND ROCK ENGINEERING, 2016, 卷号: 49, 期号: 4, 页码: 1289-1312
作者:  
Jiang, Quan;  Hao, Xian-Jie;  Feng, Xia-Ting;  Yang, Cheng-Xiang;  Li, Shao-Jun
  |  收藏  |  浏览/下载:30/0  |  提交时间:2018/06/05
多价态金属复合氧化物类芬顿催化剂的研制及其去除污染物机制 学位论文  OAI收割
博士, 北京: 中国科学院研究生院, 2013
张丽丽
收藏  |  浏览/下载:271/0  |  提交时间:2014/10/24
A design on a control method of a new type of focal plane shutter (EI CONFERENCE) 会议论文  OAI收割
2010 International Conference on Computer, Mechatronics, Control and Electronic Engineering, CMCE 2010, August 24, 2010 - August 26, 2010, Changchun, China
Xue L.; Ming L.; Zheng L.-N.; Zhou J.-F.; Zhang H.-W.; Zhang J.-C.
收藏  |  浏览/下载:33/0  |  提交时间:2013/03/25
In order to ensure appropriate exposure time  and no exposure while electric charge is transferring after taking a photograph  it is necessary to have the shutter mechanism cooperate with CCD for area CCD aerial cameras. The ground object illumination has a wide range which is from 4000Lx to 100000Lx  so a shutter which is high efficient and a continuous stepless adjustment are also required. This paper introduces the fundamental principle  structural design and control procedure about this new focal plane shutter. Under the control of DSP  the velocity of shutter curtain governed by the shutter motor can be not only precisely controlled  but also the durability and the reliability are increased. The experiment results have shown that this new shutter has the higher stability of movement  long life span with more than 105 operating times  a wide range of exposure time from1/ 50s to 1/ 320s(depending on the slit width)and the exposure error is less than 10%. With the CCD gain adjustment  the performance of this shutter is fully satisfied with the requirements of area CCD aerial cameras. 2010 IEEE.  
In situ long trace profiler for measurement of Wolter type-I mirror (EI CONFERENCE) 会议论文  OAI收割
Advances in Metrology for X-Ray and EUV Optics III, August 1, 2010 - August 2, 2010, San Diego, CA, United states
作者:  
Chen B.;  Chen B.
收藏  |  浏览/下载:27/0  |  提交时间:2013/03/25
The surface profile of Wolter type-I mirror has a great impact on the performance of Solar X-ray Telescope. According to the existing fabrication instrument and experimental conditions in our lab  an in situ Long Trace Profiler is developed and set up on the fabrication instrument in order to measure the surface profile of Wolter mirror in real time during fabrication process. Its working mechanism  structural parameters and data processing algorithm are investigated. The prototype calibrated by a standard plane mirror is used to measure a sample of Wolter type-I mirror. The results show that our prototype can achieve an accuracy of 2.6rad rms for slope error with a stability of 1.33rad during the whole measurement period. This can meet further fabrication requirements. 2010 Copyright SPIE - The International Society for Optical Engineering.  
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Compensation for the networked control systems with the long time delays 会议论文  OAI收割
IEEE International Conference on Systems, Man and Cybernetics (SMC 03), WASHINGTON, D.C., October 5-8, 2003
作者:  
Wang, Z;  Yang, J;  Tan DL(谈大龙);  Wang, XD
收藏  |  浏览/下载:11/0  |  提交时间:2012/06/06
Long-time stability of finite element approximations for parabolic equations with memory 期刊论文  OAI收割
NUMERICAL METHODS FOR PARTIAL DIFFERENTIAL EQUATIONS, 1999, 卷号: 15, 期号: 3, 页码: 333-354
作者:  
Allegretto, W;  Lin, YP;  Zhou, AH
  |  收藏  |  浏览/下载:21/0  |  提交时间:2018/07/30