机构

• 金属研究所 [2]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [4]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2023 [1]
• 2012 [1]
• 2007 [1]
• 2004 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current 期刊论文  OAI收割 MATERIALS TODAY, 2023, 卷号: 66, 页码: 9-16 作者:  Sun, Yujie;  Zhang, Rongjie;  Teng, Changjiu;  Tan, Junyang;  Zhang, Zehao   |  收藏  |  浏览/下载：19/0  |  提交时间：2024/01/08 Memristor  Multi-state computing  Ion transport  Ionic 2D materials  Linear states  Low operation current   Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文  OAI收割 Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states 作者:  Li Y.;  Li Y.;  Li Y.;  Li Y.;  Lin J. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 Lasing action in electrically pumped organic laser device is demonstrated. A DCM laser dye doped Alq film serves as the active layer. High reflective and low loss electrical contacts are used to form a high quality factor coupled microcavity. Single longitudinal cavity mode is obtained at 618 nm with a threshold current density of 612 mAcm-2 under room temperature continuous wave operation. 2012 SPIE.   Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE 期刊论文  OAI收割 Ieee Photonics Technology Letters, 2004, 卷号: 16, 期号: 3, 页码: 717-719 A. W. Yue; K. Shen; R. F. Wang; J. Shi 收藏  |  浏览/下载：11/0  |  提交时间：2012/04/14 GaInNAs  low threshold current  vertical-cavity surface-emitting lasers  (VCSELs)  continuous-wave operation  vertical-cavity lasers  diodes