机构

• 物理研究所 [2]
• 上海应用物理研究所 [2]
• 半导体研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2014 [2]
• 2006 [1]
• 2005 [1]
• 1997 [1]

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 New high-pressure polymorph of In2S3 with defect Th3P4-type structure 期刊论文  OAI收割 JOURNAL OF SOLID STATE CHEMISTRY, 2014, 卷号: 210, 期号: 1, 页码: 155—159 Lai, XJ; Zhu, F; Wu, Y; Huang, R; Wu, X; Zhang, Q; Yang, K; Qin, S 收藏  |  浏览/下载：24/0  |  提交时间：2015/03/13 POST-PEROVSKITE PHASE  CRYSTAL-STRUCTURE  TRANSITION  MGSIO3  MBAR   Quasi-hydrostatic Limit of LiF as a Pressure Transmitting Medium and Its Equation of States 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 5 Guo, JZ; Wu, Y; Zhu, F; Wu, X; Yang, K; Qin, S 收藏  |  浏览/下载：28/0  |  提交时间：2015/03/13 THERMAL EXPANSIVITY  OF-STATE  MBAR   Optical properties of methane to 288 GPa at 300 K 期刊论文  OAI收割 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2006, 卷号: 67, 期号: 12, 页码: 2603 Sun, LL; Ruoff, AL; Zha, CS; Stupian, G 收藏  |  浏览/下载：27/0  |  提交时间：2013/09/24 DIAMOND-ANVIL CELL  X-RAY-DIFFRACTION  HIGH-PRESSURE  SOLID HYDROGEN  MULTIMEGABAR PRESSURES  GIANT PLANETS  SUPERCONDUCTIVITY  SULFUR  METAL  MBAR   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：119/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.   Raman study of nitrogen at high pressure 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 1997, 卷号: 14, 期号: 6, 页码: 440 Chen, LC; Wang, LJ; Gu, HC; Xu, LW; Che, RZ; Wang, JF 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/24 PHASE-TRANSITIONS  SPECTROSCOPY  MBAR  KBAR  N-2  GPA