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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共16条,第1-10条 帮助

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Online Battery Protective Energy Management for Energy-Transportation Nexus 期刊论文  OAI收割
IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, 2022, 卷号: 18, 期号: 11, 页码: 8203-8212
作者:  
Li, Shuangqi;  Zhao, Pengfei;  Gu, Chenghong;  Li, Jianwei;  Cheng, Shuang
  |  收藏  |  浏览/下载:51/0  |  提交时间:2022/11/14
钛、镁及其合金材料表面减摩抗磨及耐蚀性能研究 学位论文  OAI收割
北京: 中国科学院大学, 2019
作者:  
李朝霞
  |  收藏  |  浏览/下载:112/0  |  提交时间:2019/10/31
Facile synthesis of hydrated magnesium vanadium bronze sigma-Mg0.25V2O5 center dot H2O as a novel cathode material for lithium-ion batteries 期刊论文  OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 777, 页码: 931
作者:  
Ma, Yining;  Zhou, Huaijuan;  Li, Rong;  Huang, Aibin;  Cao, Xun
  |  收藏  |  浏览/下载:60/0  |  提交时间:2019/12/26
Formation of self-lubricating PEO coating via in-situ incorporation of PTFE particles 期刊论文  OAI收割
SURFACE & COATINGS TECHNOLOGY, 2018, 卷号: 337, 页码: 379-388
作者:  
Chen, Y;  Lu, XP;  Blawert, C;  Zheludkevich, ML;  Zhang, T
  |  收藏  |  浏览/下载:42/0  |  提交时间:2018/06/05
造礁珊瑚新型元素和同位素体系研究及其对生物活动的记录 学位论文  OAI收割
: 中国科学院广州地球化学研究所, 2017
作者:  
陈雪霏
  |  收藏  |  浏览/下载:24/0  |  提交时间:2018/09/13
相变储热Al-Si-Cu-Mg合金与容器壳体候选材料相容性研究 期刊论文  OAI收割
腐蚀科学与防护技术, 2013, 期号: 3, 页码: 224-228
谢亿; 谢国胜; 郭建亭; 胡加瑞; 徐国富
收藏  |  浏览/下载:26/0  |  提交时间:2013/12/25
一种缓释型青霉素阴离子插层水滑石材料及其制备和应用 专利  OAI收割
专利类型: 发明, 专利号: CN201110290535.3, 申请日期: 2012-06-20, 公开日期: 2012-06-20
作者:  
王毅
收藏  |  浏览/下载:46/0  |  提交时间:2014/08/04
Improved hydrogen storage properties of Mg-V nanoparticles prepared by hydrogen plasma-metal reaction 期刊论文  OAI收割
JOURNAL OF POWER SOURCES, 2011, 卷号: 196, 期号: 22, 页码: 9599-9604
作者:  
Liu, Tong;  Zhang, Tongwen;  Qin, Chenggong;  Zhu, Mu;  Li, Xingguo
  |  收藏  |  浏览/下载:30/0  |  提交时间:2019/04/09
一种缓释型苯甲酸根阴离子插层水滑石碳钢防腐蚀材料及其制备和应用 专利  OAI收割
专利类型: 发明, 专利号: CN201110041730.2, 申请日期: 2011-08-03, 公开日期: 2011-08-03
作者:  
王毅
收藏  |  浏览/下载:39/0  |  提交时间:2014/08/04
Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
作者:  
Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..