机构

• 金属研究所 [2]
• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2022 [2]
• 2014 [1]
• 2006 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A pioneering melamine foam-based electrode via facile synthesis as prospective direction for vanadium redox flow batteries 期刊论文  OAI收割 CHEMICAL ENGINEERING JOURNAL, 2022, 卷号: 439, 页码: 9 作者:  Zhang, Xihao;  Zhang, Denghua;  Xu, Zeyu;  Zhang, Kaiyue;  Zhang, Yifan   |  收藏  |  浏览/下载：40/0  |  提交时间：2022/07/01 Melamine foam   N, P co-doped   Reduced graphene oxide  Electrode  Vanadium redox flow battery   Facile synthesis of N, P co-doped carbon encapsulated Ni catalyst for green production of cyclopentanone from biomass derivative furfural 期刊论文  OAI收割 FUEL, 2022, 卷号: 319 作者:  Hu, Zhi;  Xie, Aidi;  Chen, Chun;  Zou, Zidan;  Shen, Yue   |  收藏  |  浏览/下载：74/0  |  提交时间：2022/05/16 N, P co-doped  Ionic liquid  Hydrogenation  Rearrangement  Nickel   Passivated n-p co-doping of niobium and nitrogen into self-organized TiO2 nanotube arrays for enhanced visible light photocatalytic performance 期刊论文  OAI收割 Applied Catalysis B-Environmental, 2014, 卷号: 144, 页码: 343-352 Z. C. Xu; W. Y. Yang; Q. Li; S. Gao; J. K. Shang 收藏  |  浏览/下载：25/0  |  提交时间：2014/02/19 Passivated n-p co-doping  Niobium  Nitrogen  TiO2 nanotube arrays  Enhanced visible light photocatalytic performance  doped titanium-dioxide  anatase tio2  thin-films  optical-properties  solar light  oxide  nanoparticles  anodization  tio2-anatase  nanocrystals   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文  OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.