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CAS IR Grid
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化学研究所 [3]
长春光学精密机械与物... [2]
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期刊论文 [3]
会议论文 [2]
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2015 [1]
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Influences of Conjugation Extent on the Aggregation-Induced Emission Quantum Efficiency in Silole Derivatives: A Computational Study
期刊论文
OAI收割
CHEMISTRY-AN ASIAN JOURNAL, 2015, 卷号: 10, 期号: 10, 页码: 2154-2161
作者:
Xie, Yujun
;
Zhang, Tian
;
Li, Zhen
;
Peng, Qian
;
Yi, Yuanping
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2015/11/17
aggregation-induced emission
excited state radiative and non-radiative decay rate constants
fluorescence quantum efficiency
QM/MM calculation
photophysics
siloles
Energy transfer in Y3Al5O12:Ce 3, Pr3+ and CaMoO4:Sm3, Eu 3 phosphors (EI CONFERENCE)
会议论文
OAI收割
作者:
Wang L.
;
Wang X.-J.
;
Zhang X.
;
Zhang X.
;
Zhang X.
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  |  
浏览/下载:36/0
  |  
提交时间:2013/03/25
Non-radiative energy transfers (ET) from Ce3 to Pr3+ in Y3Al5O12:Ce3
Pr3+ and from Sm3 to Eu3 in CaMoO4:Sm3
Eu3 are studied based on photoluminescence spectroscopy and fluorescence decay patterns. The result indicates an electric dipoledipole interaction that governs ET in the LED phosphors. For Ce3 concentration of 0.01 in YAG:Ce3
Pr3+
the rate constant and critical distance are evaluated to be 4.510-36 cm 6 s-1 and 0.81 nm
respectively. An increase in the red emission line of Pr3+ relative to the yellow emission band of Ce 3
on increasing Ce3 concentration is observed. This behavior is attributed to the increase of spectral overlap integrals between Ce3 emission and Pr3+ excitation due to the fact that the yellow band shifts to the red spectral side with increasing Ce3 concentration. In CaMoO4:Sm3
Eu3
Sm 3Eu3 transfer occurs from 4G5/2 of Sm3 to 5D0 of Eu3. The rate constant of 8.510-40 cm6 s-1 and the critical transfer distance of 0.89 nm are evaluated. 2010 Elsevier B.V. All rights reserved.
Vibration correlation function formalism of radiative and non-radiative rates for complex molecules
期刊论文
OAI收割
CHEMICAL PHYSICS, 2010, 卷号: 370, 期号: 1-3, 页码: 215-222
作者:
Peng, Qian
;
Niu, Yingli
;
Deng, Chunmei
;
Shuai, Zhigang
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2019/04/09
Radiative Rate
Non-radiative Rate
Vibration Correlation Function Method
Duschinsky Rotation
Herzberg-teller Effect
Effect of Polyene Chain Length on the Photophysical Properties in Diphenpolyenes
期刊论文
OAI收割
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2008, 卷号: 29, 期号: 12, 页码: 2435-2439
作者:
Peng Qian
;
Niu Ying-Li
;
Shuai Zhi-Gang
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/04/09
Diphenpolyene
Electronic Structure
Conjugation Length Effect
Photophysical Property
Non-radiative Decay Rate
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:
Li J.
;
Wang L.-J.
;
Wang L.-J.
;
Ning Y.-Q.
;
Li J.
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  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.