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	Guanidinium-assisted crystallization modulation and reduction of open-circuit voltage deficit for efficient planar FAPbBr3 perovskite solar cells 期刊论文 OAI收割 CHEMICAL ENGINEERING JOURNAL, 2022, 卷号: 437 作者: Xu, Huifen; Liang, Zheng; Ye, Jiajiu; Xu, Shendong; Wang, Zihan \| 收藏 \| 浏览/下载：106/0 \| 提交时间：2022/05/16 Wide-bandgap perovskites Pure-bromide perovskite solar cells Non-radiative recombination Open-circuit voltage loss
	The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
	Rapid photoluminescence quenching in gainnas quantum wells at low temperature 期刊论文 iSwitch采集 Journal of luminescence, 2007, 卷号: 122, 页码: 188-190 作者: Sun, Z.; Yang, X. D.; Sun, B. Q.; Ji, Y.; Zhang, S. Y. 收藏 \| 浏览/下载：24/0 \| 提交时间：2019/05/12 Gainnas/gaas Photoluminescence quenching Non-radiative recombination
	Preparation, characterization and optical properties of carbon doped ZnO nanocrystal (EI CONFERENCE) 会议论文 OAI收割 ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu J.; Liu J.; Liu J.; Li S.; Wang Z. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 In this paper we prepared carbon doped nanocrystalline ZnO by pyrolyzed zinc stearate at 250C and 300C respectively. The XRD curves indicate the sample has polycrystalline hexagonal wurtzite structure. The XRD data of the sample prepared at 250C and 300C has a bigger angle shift about 0.05and 0.3respectively. That indicate the structure of the sample has some changes. The EDS indicate the sample contains Zn O and C. So the XRD shift may attribute to the C. The XPS indicate the C doped in the crystal lattice of ZnO of the sample prepared at 300C and the sample prepared at 250C may be only a few of C doped in the crystal lattice of ZnO. The PL of the sample prepared at 300C only has a weak ultraviolet emission which indicates C modified the nanocrystalline ZnO surface as a non-radiative recombination center. In this process C could non-radiatively recombine the carries on the nanocrystallin ZnO surface. The sample prepared at 250C has a strong visible emission at about 530 nm. This emission band could be attributed to oxygen vacancy because C schlepped some oxygen on the nanocrystalline ZnO surface.