机构

• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 上海微系统与信息技术... [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2015 [1]
• 2007 [1]
• 2006 [1]

学科主题

• Engineerin... [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient 期刊论文  OAI收割 Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4 作者:  Miao, J(苗静);  Shen, WJ(沈文江);  He, CD;  Xue, CY;  Xiong, JJ 收藏  |  浏览/下载：88/0  |  提交时间：2015/12/31 silicon  elemental semiconductors  silicon-on-insulator  wafer bonding  electromechanical effects  ultrasonic transducers  capacitive transducers  micromechanical devices  micromachining  vibrations  membranes  finite element analysis  reliability  capacitance  electromechanical coupling coefficient  capacitive micromachined ultrasonic transducer  impedance matching  propagation medium  microelectromechanical system capacitive ultrasonic transducer  silicon on insulator  wafer bonding  optimum geometric dimensions  membrane mechanical vibration  electrical characteristics  finite-element analysis  operation mode  device safety  device reliability  equivalent stress  operation-collapse voltage  bottom electrodes  glass substrate surface  parallel parasitic capacitance  Si  SiO2   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   Nanofabrication based on MEMS technology 期刊论文  OAI收割 IEEE SENSORS JOURNAL, 2006, 卷号: 6, 期号: 3, 页码: 686-690 Wang, YL; Li, XX; Li, T; Yang, H; Jiao, JW 收藏  |  浏览/下载：11/0  |  提交时间：2011/11/08 ON-INSULATOR SUBSTRATE  IMPRINT LITHOGRAPHY  ROOM-TEMPERATURE  SILICON  FABRICATION  SI  RESONATORS  RESOLUTION  OPERATION  FILMS