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浏览/检索结果: 共12条,第1-10条 帮助

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Reply to Comments by Jia Yue on "Global Distribution and Variations of NO Infrared Radiative Flux and Its Responses to Solar Activity and Geomagnetic Activity in the Thermosphere" 期刊论文  OAI收割
JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 2018, 期号: 12, 页码: 10419-10422
作者:  
Tang, Chaoli;  Wei, Yuanyuan;  Liu, Dong;  Luo, Tao;  Dai, Congming
  |  收藏  |  浏览/下载:23/0  |  提交时间:2020/03/31
Theoretical investigation of electron-ion recombination processes of Li-like tungsten ions 期刊论文  OAI收割
JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 2018, 卷号: 220, 页码: 162-171
作者:  
Dou, Li-Jun;  Xie, Lu-You;  Huang, Zhong-Kui;  Wen, Wei-Qiang;  Zhang, Deng-Hong
  |  收藏  |  浏览/下载:51/0  |  提交时间:2019/03/27
Influences of Conjugation Extent on the Aggregation-Induced Emission Quantum Efficiency in Silole Derivatives: A Computational Study 期刊论文  OAI收割
CHEMISTRY-AN ASIAN JOURNAL, 2015, 卷号: 10, 期号: 10, 页码: 2154-2161
作者:  
Xie, Yujun;  Zhang, Tian;  Li, Zhen;  Peng, Qian;  Yi, Yuanping
收藏  |  浏览/下载:37/0  |  提交时间:2015/11/17
Near-limit flame spread in low-speed opposed and concurrent flows over thick fuels 会议论文  OAI收割
66th International Astronautical Congress 2015: Space - The Gateway for Mankind's Future, IAC 2015, Jerusalem, Israel, October 12, 2015 - October 16, 2015
作者:  
Wang SF(王双峰);  Zhu F(朱峰)
收藏  |  浏览/下载:28/0  |  提交时间:2017/05/05
Energy transfer in Y3Al5O12:Ce 3, Pr3+ and CaMoO4:Sm3, Eu 3 phosphors (EI CONFERENCE) 会议论文  OAI收割
作者:  
Wang L.;  Wang X.-J.;  Zhang X.;  Zhang X.;  Zhang X.
收藏  |  浏览/下载:36/0  |  提交时间:2013/03/25
Non-radiative energy transfers (ET) from Ce3 to Pr3+ in Y3Al5O12:Ce3  Pr3+ and from Sm3 to Eu3 in CaMoO4:Sm3  Eu3 are studied based on photoluminescence spectroscopy and fluorescence decay patterns. The result indicates an electric dipoledipole interaction that governs ET in the LED phosphors. For Ce3 concentration of 0.01 in YAG:Ce3  Pr3+  the rate constant and critical distance are evaluated to be 4.510-36 cm 6 s-1 and 0.81 nm  respectively. An increase in the red emission line of Pr3+ relative to the yellow emission band of Ce 3  on increasing Ce3 concentration is observed. This behavior is attributed to the increase of spectral overlap integrals between Ce3 emission and Pr3+ excitation due to the fact that the yellow band shifts to the red spectral side with increasing Ce3 concentration. In CaMoO4:Sm3  Eu3  Sm 3Eu3 transfer occurs from 4G5/2 of Sm3 to 5D0 of Eu3. The rate constant of 8.510-40 cm6 s-1 and the critical transfer distance of 0.89 nm are evaluated. 2010 Elsevier B.V. All rights reserved.  
Vibration correlation function formalism of radiative and non-radiative rates for complex molecules 期刊论文  OAI收割
CHEMICAL PHYSICS, 2010, 卷号: 370, 期号: 1-3, 页码: 215-222
作者:  
Peng, Qian;  Niu, Yingli;  Deng, Chunmei;  Shuai, Zhigang
  |  收藏  |  浏览/下载:22/0  |  提交时间:2019/04/09
Effect of Polyene Chain Length on the Photophysical Properties in Diphenpolyenes 期刊论文  OAI收割
CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2008, 卷号: 29, 期号: 12, 页码: 2435-2439
作者:  
Peng Qian;  Niu Ying-Li;  Shuai Zhi-Gang
  |  收藏  |  浏览/下载:18/0  |  提交时间:2019/04/09
Theoretical analysis of the heat dissipation mechanism in Yb3+-doped double-clad fiber lasers 期刊论文  OAI收割
journal of modern optics, 2008, 卷号: 55, 期号: 3, 页码: 459-471
作者:  
Li, Jianfeng;  Duan, Kailiang;  Wang, Yishan;  Cao, Xiangjie;  Zhao, Wei
收藏  |  浏览/下载:17/0  |  提交时间:2011/09/30
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.