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浏览/检索结果: 共8条，第1-8条 帮助

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An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells 期刊论文  OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2019, 卷号: 200
作者:  Gao, Tian;  Yang, Qing;  Guo, Xueqi;  Huang, Yuqing;  Zhang, Zhi
  |  收藏  |  浏览/下载：63/0  |  提交时间：2019/12/18
Long-lived Single Excitons, Trions, and Biexcitons in CdSe/CdTe Type-II Colloidal Quantum WeIls 期刊论文  OAI收割
CHINESE JOURNAL OF CHEMICAL PHYSICS, 2017, 卷号: 30, 期号: 6, 页码: 649-656
作者:  Wang, Jun-hui;  Liang, Gui-jie;  Wu, Kai-feng
  |  收藏  |  浏览/下载：66/0  |  提交时间：2019/06/20
Influence of Insulating Oxide Coatings on the Performance of Perovskite Solar Cells and the Interface Charge Recombination Dynamics 期刊论文  OAI收割
ACTA PHYSICO-CHIMICA SINICA, 2016, 卷号: 32, 期号: 5, 页码: 1207-1213
作者:  Zhou Li;  Zhu Jun;  Xu Ya-Feng;  Shao Zhi-Peng;  Zhang Xu-Hui
  |  收藏  |  浏览/下载：17/0  |  提交时间：2017/11/16
Effective recombination velocity of textured surfaces 期刊论文  OAI收割
Applied Physics Letters, 2010, 期号: 19
作者:  Yang H (杨辉);  Dong JR (董建荣);  Lu SL (陆书龙)
收藏  |  浏览/下载：19/0  |  提交时间：2010/12/31
Effective recombination velocity of textured surfaces 期刊论文  OAI收割
applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107
Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui)
收藏  |  浏览/下载：125/3  |  提交时间：2010/06/04
Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption 期刊论文  OAI收割
JOURNAL OF APPLIED PHYSICS, 2008, 卷号: 104, 期号: 10
作者:  Zhang, Xiren;  Li, Bincheng;  Liu, Xianming
收藏  |  浏览/下载：25/0  |  提交时间：2015/09/21
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
外加高压电场下空气中激光等离子体通道寿命研究 期刊论文  OAI收割
光学学报, 2007, 卷号: 27, 期号: 6, 页码: 1059, 1062
朱佳斌; 季忠刚; 邓蕴沛; 刘建胜; 李儒新; 徐至展
收藏  |  浏览/下载：1208/112  |  提交时间：2009/09/18