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Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal 期刊论文  OAI收割
JOURNAL OF LUMINESCENCE, 2022, 卷号: 249
作者:  
Ren, Hao;  Li, Hongyuan;  Zou, Yong;  Deng, Hengyang;  Peng, Ziming
  |  收藏  |  浏览/下载:42/0  |  提交时间:2022/12/22
脉冲激光晶化非晶硅薄膜的有限差分模拟 期刊论文  OAI收割
强激光与粒子束, 2008, 卷号: 20, 期号: 7, 页码: 1100, 1104
袁志军; 楼祺洪; 周军; 董景星; 魏运荣; 王之江
收藏  |  浏览/下载:1049/202  |  提交时间:2009/09/18
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.  
Color video display technique based on diode-pumped solid state lasers (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu H.;  Wei Z.-L.;  Liu H.;  Liu H.;  Kang Y.-S.
收藏  |  浏览/下载:28/0  |  提交时间:2013/03/25