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CAS IR Grid
机构
半导体研究所 [2]
金属研究所 [1]
长春光学精密机械与物... [1]
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OAI收割 [3]
iSwitch采集 [1]
内容类型
期刊论文 [3]
会议论文 [1]
发表日期
2011 [1]
2009 [3]
学科主题
半导体物理 [1]
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Roughness analysis of optical surfaces by X-ray scattering (EI CONFERENCE)
会议论文
OAI收割
2011 International Conference on Electronics and Optoelectronics, ICEOE 2011, July 29, 2011 - July 31, 2011, Dalian, China
作者:
Chen B.
;
Chen B.
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/03/25
A grazing incidence x-ray scattering (XRS) method
Order perturbation theory (FOPT)
is stated briefly and an experimental facility based on an improved X-ray diffraction has been introduced
which can work with high performance. The x-ray scattering distributions of two super smooth silicon samples measured at the incidence angle 0.2 degree
as the x-ray wavelength is 0.154 nm
have been given and analyzed by the FOPT to give information about the surface profiles. As a comparison
the root mean square (RMS) surface roughness
grey-scale maps and one-dimensional power spectral density (1D PSD) have been derived from the atomic-force microscope (AFM) data. The results evaluated by FOPT are in good agreement with that of AFM
which indicates that x-ray scattering method is a practical characterization for the investigation of super smooth surfaces. 2011 IEEE.
Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer
期刊论文
iSwitch采集
Superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:
Zhang, M. L.
;
Wang, X. L.
;
Xiao, H. L.
;
Wang, C. M.
;
Yang, C. B.
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2019/05/12
Algan/gan heterostructure
Superlattices (sls)
Root mean square roughness (rms)
Sheet resistance
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
期刊论文
OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:
Zhang, M. L.
;
Wang, X. L.
;
Xiao, H. L.
;
Wang, C. M.
;
Yang, C. B.
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2021/02/02
AlGaN/GaN heterostructure
Superlattices (SLs)
Root mean square roughness (RMS)
Sheet resistance
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer
期刊论文
OAI收割
superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:
Zhang ML
收藏
  |  
浏览/下载:174/57
  |  
提交时间:2010/03/08
AlGaN/GaN heterostructure
Superlattices (SLs)
Root mean square roughness (RMS)
Sheet resistance