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	Experiments and their analysis for self-assembly growth of gan quantum dots via mocvd 期刊论文 iSwitch采集 Rare metal materials and engineering, 2005, 卷号: 34, 期号: 12, 页码: 1849-1853 作者: Meng, T; Zhu, XF; Wang, ZG 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/05/12 Gan based quantum dots Self-assembly S-k mode Mocvd
	Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文 OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration the size of dots becomes larger and the density decreases which is explained by virtue of the surface free energy.
	Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD 期刊论文 OAI收割 rare metal materials and engineering, 2005, 卷号: 34, 期号: 12, 页码: 1849-1853 Meng T; Zhu XF; Wang ZG 收藏 \| 浏览/下载：316/9 \| 提交时间：2010/04/11 GaN based quantum dots self-assembly S-K mode MOCVD CHEMICAL-VAPOR-DEPOSITION STRANSKI-KRASTANOV GROWTH OPTICAL-PROPERTIES ALGAN SURFACES