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CAS IR Grid
机构
物理研究所 [4]
长春光学精密机械与物... [3]
半导体研究所 [3]
近代物理研究所 [3]
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OAI收割 [18]
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期刊论文 [16]
会议论文 [2]
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2012 [1]
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半导体材料 [3]
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Evaluation of grinding characteristics for sapphire ultra-precision grinding using small grit sizes wheels based on AE signals
期刊论文
OAI收割
JOURNAL OF MANUFACTURING PROCESSES, 2023, 卷号: 90, 页码: 94-110
作者:
Wang, Sheng
;
Sun, Guoyan
;
Zhao, Qingliang
;
Yang, Xiaodong
  |  
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2023/04/04
Sapphire
Ultra-precision grinding
Surface topography
Acoustic emission
Ductile-brittle transition
Subsurface damage
Processing and machining mechanism of ultrasonic vibration-assisted grinding on sapphire
期刊论文
OAI收割
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 卷号: 142, 页码: 9
作者:
Chen, Yue
;
Hu, Zhongwei
;
Yu, Yiqing
;
Lai, Zhiyuan
;
Zhu, Jiegang
  |  
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2022/07/18
Sapphire
Ultrasonic vibration-assisted grinding
Surface quality
Grinding characteristics
Fabrication of un-coated transparent superhydrophobic sapphire surface using laser surface ablation and heat treatment
期刊论文
OAI收割
Cirp Annals-Manufacturing Technology, 2018, 卷号: 67, 期号: 1, 页码: 571-574
作者:
Ngo, C. V.
;
Chun, D. M.
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/09/17
Laser beam machining (LBM)
Surface modification
Transparent
superhydrophobic sapphire
volatile organic-compounds
of-the-art
coatings
opportunities
membrane
removal
pulses
design
Engineering
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer
期刊论文
OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 471
Chen, Y
;
Jiang, Y
;
Xu, PQ
;
Ma, ZG
;
Wang, XL
;
He, T
;
Peng, MZ
;
Luo, WJ
;
Liu, XY
;
Wang, L
;
Jia, HQ
;
Chen, H
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2013/09/17
ELECTRON-MOBILITY TRANSISTORS
SURFACE PASSIVATION
HETEROSTRUCTURES
SAPPHIRE
LEAKAGE
GROWTH
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
会议论文
OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.
;
Su S.
;
Yi X.
;
Mei T.
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural
electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing
and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance
Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications
Switzerland.
Ordered ultra thin ZnO films on metal substrate
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 22, 页码: 9015
Guo, DH
;
Xue, MS
;
Guo, QL
;
Wu, KH
;
Guo, JD
;
Wang, EG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/09/24
ENERGY-LOSS-SPECTROSCOPY
RESOLVED PHOTOEMISSION-SPECTROSCOPY
SINGLE-CRYSTALLINE ZNO
X-RAY PHOTOEMISSION
MGO BUFFER LAYER
ELECTRONIC-STRUCTURE
GROWTH
SURFACE
SAPPHIRE
ZINC
Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 1, 页码: 58-62
作者:
Zhang, L. Q.
;
Fu, Y. C.
;
Zhou, L. H.
;
Zhang, C. H.
;
Yang, Y. T.
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2009/11/20
Sapphire
Annealing
Ion implantation
Au nanoparticle
Optical absorption
Surface plasmon resonance
Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD
期刊论文
OAI收割
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015415
作者:
Jia CH
收藏
  |  
浏览/下载:179/14
  |  
提交时间:2010/03/08
PULSED-LASER DEPOSITION
THIN-FILMS
ZINC-OXIDE
PHOTOLUMINESCENCE
TEMPERATURE
SAPPHIRE
SURFACE
GROWTH