机构

• 半导体研究所 [6]
• 上海微系统与信息技术... [2]
• 物理研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [9]

发表日期

• 2006 [1]
• 2005 [2]
• 2003 [2]
• 1999 [2]
• 1997 [1]
• 1991 [1]
• 更多

学科主题

• 半导体物理 [4]
• Applied [1]
• Physics [1]
• Physics, C... [1]
• 半导体器件 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Magnetotransport in two-dimensional electron gas: The interplay between spin-orbit interaction and Zeeman splitting 期刊论文  OAI收割 physical review b, 2006, 卷号: 73, 期号: 4, 页码: art.no.045303 Yang W; Chang K 收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11 QUANTUM-WELLS  IN0.53GA0.47AS/IN0.52AL0.48AS HETEROSTRUCTURE  SEMICONDUCTOR HETEROSTRUCTURES  RELAXATION ANISOTROPY  GATE CONTROL  SYSTEMS   Effects of spin-orbit interaction and magnetic field on the electron transport in quasi-1D ferromagnetic/semiconductor/ferromagnetic system 期刊论文  OAI收割 CHINESE PHYSICS, 2005, 卷号: 14, 期号: 5, 页码: 1021 Li, YX; Li, BZ 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/17 QUANTUM-WELLS  INJECTION  BARRIER  HETEROSTRUCTURE  SEMICONDUCTOR  POLARIZATION  SPINTRONICS  DEPENDENCE   Dynamical instability and switching of resonant tunneling device under terahertz radiation 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2005, 卷号: 98, 期号: 3, 页码: 33718-33718 Zhang,YH; Cao,JC; Feng,SL; Liu,HC 收藏  |  浏览/下载：16/0  |  提交时间：2011/12/17 QUANTUM-BASED DEVICES  SEMICONDUCTOR-HETEROSTRUCTURE  BISTABILITY  DIODES  OSCILLATIONS  SIMULATION  TRANSPORT  MODEL  LASER   Induced charge-density oscillation under a quantizing magnetic field and intense terahertz radiation 期刊论文  OAI收割 PHYSICAL REVIEW B, 2003, 卷号: 67, 期号: 7, 页码: 75105-75105 Fujita, M; Toyoda, T; Cao, JC; Zhang, C 收藏  |  浏览/下载：14/0  |  提交时间：2011/12/17 SEMICONDUCTOR-HETEROSTRUCTURE  ELECTRON GASES  LASER  STATES   Spin-polarized current produced by a double barrier resonant tunneling diode 期刊论文  OAI收割 solid state communications, 2003, 卷号: 127, 期号: 7, 页码: 489-492 Xia JB; Hai GQ; Wang JN 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 semiconductor  semimagnetic  spin  tunneling  SEMICONDUCTOR HETEROSTRUCTURE  INJECTION   High-speed and high-power 1.3 mu m ingaasp/inp selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文  iSwitch采集 Japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 作者:  Zhang, BJ;  Yi, MB;  Song, JF;  Gao, DS;  Zhu, NH 收藏  |  浏览/下载：44/0  |  提交时间：2019/05/12 Semiconductor laser  Heterostructure  Proton bombardment  Modulation bandwidth  Mocvd   High-speed and high-power 1.3 mu m InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions 期刊论文  OAI收割 japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 12a, 页码: 6729-6731 Zhang BJ; Yi MB; Song JF; Gao DS; Zhu NH; Wu RH; Wang W 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 semiconductor laser  heterostructure  proton bombardment  modulation bandwidth  MOCVD  CURRENT BLOCKING LAYERS  INNER-STRIPE LASERS   Magnetophonon resonance in the energy relaxation of electrons in a quantum well 期刊论文  OAI收割 physical review b, 1997, 卷号: 55, 期号: 15, 页码: 9333-9335 Wu XG; Peeters FM 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/17 GAAS HETEROSTRUCTURE  CARRIER RELAXATION  PHONON  SEMICONDUCTOR  SCATTERING   GAAS/GAALAS GRADED INDEX SEPARATE CONFINEMENT SINGLE QUANTUM-WELL SINGLE-MODE WAVE-GUIDE ELECTROABSORPTION LIGHT-MODULATOR 期刊论文  OAI收割 iee proceedings-j optoelectronics, 1991, 卷号: 138, 期号: 5, 页码: 313-318 ZHU LD; XIONG FK; WANG CM; CHEN ZH; HSIE YL; FEAK GAB; BALLANTYNE JM 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 GAALAS SEMICONDUCTOR-LASERS  OPTICAL MODULATION  ULTIMATE LIMIT  ABSORPTION  HETEROSTRUCTURE  DEPENDENCE  DIODE