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浏览/检索结果: 共179条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Investigation of effective annealing on cdmnte:in crystals with different thickness for gamma-ray detectors 期刊论文  iSwitch采集 Journal of crystal growth, 2018, 卷号: 483, 页码: 94-101 作者:  Yu, Pengfei;  Xu, Yadong;  Chen, Yongren;  Song, Jie;  Zhu, Yi 收藏  |  浏览/下载：53/0  |  提交时间：2019/04/23 Characterization  Bridgman technique  Cadmium compounds  Semiconducting ii-vi materials   Na1.88Bi1.88S4 and Na1.36Ca1.28Bi1.36S4 Single Crystals: Growth, Structure and Optical Property 期刊论文  OAI收割 JOURNAL OF INORGANIC MATERIALS, 2018, 卷号: 33, 期号: 1, 页码: 100, 106 作者:  Wang Dong;  He Jiao-Qiao;  Lai Xiao-Fang;  Huang Rong-Tie;  Shi Ying   |  收藏  |  浏览/下载：34/0  |  提交时间：2018/12/28 single crystal growth  Na1.88Bi1.88S4  Na1.36Ca1.28Bi1.36S4  semiconducting materials   Na1.88Bi1.88S4 and Na1.36Ca1.28Bi1.36S4 Single Crystals: Growth, Structure and Optical Property 期刊论文  OAI收割 JOURNAL OF INORGANIC MATERIALS, 2018, 卷号: 33, 期号: 1, 页码: 100-106 作者:  Wang Dong;  He Jiao-Qiao;  Lai Xiao-Fang;  Huang Rong-Tie;  Shi Ying   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/04/09 Single Crystal Growth  Na1.88bi1.88s4  Na1.36ca1.28bi1.36s4  Semiconducting Materials   Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 483, 页码: 94-101 作者:  Li, Z;  Bai, M;  Li, H;  Jie, WQ;  Xu, YD   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/07/11 Characterization  Bridgman technique  Cadmium compounds  Semiconducting II-VI materials   Na1.88Bi1.88S4 and Na1.36Ca1.28Bi1.36S4 Single Crystals: Growth, Structure and Optical Property 期刊论文  OAI收割 JOURNAL OF INORGANIC MATERIALS, 2018, 卷号: 33, 期号: 1, 页码: 100 作者:  Wang Dong;  He JiaoQiao;  Lai XiaoFang;  Huang RongTie;  Shi Ying   |  收藏  |  浏览/下载：105/0  |  提交时间：2020/12/24 Single Crystal Growth  Na1.88bi1.88s4  Na1.36ca1.28bi1.36s4  Semiconducting Materials   Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 450, 页码: 140-147 作者:  Chaturvedi, Apoorva;  Slabon, Adam;  Hu, Peng;  Feng, Shuanglong;  Zhang, Ke-ke   |  收藏  |  浏览/下载：25/0  |  提交时间：2018/03/15 Plasma Synthesis  Nanomaterials  Semiconducting Materials  Transition Metal Dichalcogenides   Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2016, 卷号: 451, 页码: 194 作者:  Yu, PF;  Xu, YD;  Luan, LJ;  Du, YY;  Zheng, JH   |  收藏  |  浏览/下载：38/0  |  提交时间：2017/07/26 Characterization  Bridgman technique  Cadmium compounds  Semiconducting II-VI materials   Influence of electrode types on the electrohydrodynamic instability patterning process: a comparative study 期刊论文  OAI收割 rsc advances, 2016, 卷号: 6, 期号: 113, 页码: 112300-112306 作者:  Liu, Minzhe;  Li, Hefu;  Yu, Weixing;  Wang, Taisheng;  Liu, Zhenyu 收藏  |  浏览/下载：30/0  |  提交时间：2016/12/21 Computer software  Dielectric materials  Electrodes  Electrohydrodynamics  Film thickness  Polymer films  Semiconducting films   Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 51-55 作者:  Zhou, K(周堃);  Ikeda, M;  Liu, JP(刘建平);  Zhang, SM(张书明);  Li, ZC(李增成) 收藏  |  浏览/下载：39/0  |  提交时间：2015/02/03 Growth models  Metalorganic vapor phase epitaxy  Nitrides  Semiconducting III-V materials   Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 416, 页码: 7 作者:  Zhou, K(周堃);  Liu, JP(刘建平);  Ikeda, M;  Zhang, SM(张书明);  Li, DY(李德尧) 收藏  |  浏览/下载：18/0  |  提交时间：2015/12/31 Surface structure  Metalorganic vapor phase epitaxy  Nitrides  Semiconducting III-V materials