中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer 期刊论文  iSwitch采集
Superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  
Zhang, M. L.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Yang, C. B.
收藏  |  浏览/下载:39/0  |  提交时间:2019/05/12
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  
Zhang, M. L.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Yang, C. B.
  |  收藏  |  浏览/下载:12/0  |  提交时间:2021/02/02
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文  OAI收割
superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59
作者:  
Zhang ML
收藏  |  浏览/下载:177/57  |  提交时间:2010/03/08