机构

• 物理研究所 [3]
• 半导体研究所 [3]
• 长春应用化学研究所 [3]
• 长春光学精密机械与物... [2]
• 化学研究所 [2]
• 上海应用物理研究所 [2]
• 更多

采集方式

• OAI收割 [17]
• iSwitch采集 [3]

内容类型

• 期刊论文 [19]
• 会议论文 [1]

发表日期

• 2019 [1]
• 2018 [2]
• 2015 [1]
• 2014 [2]
• 2013 [1]
• 2012 [2]
• 更多

学科主题

• 半导体器件 [1]
• 材料科学与物理化学 [1]
• 物理化学 [1]

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浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Diluted Oxide Interfaces with Tunable Ground States 期刊论文  OAI收割 ADVANCED MATERIALS, 2019, 卷号: 31, 期号: 10 作者:  Gan, Yulin;  Christensen, Dennis Valbjorn;  Zhang, Yu;  Zhang, Hongrui;  Krishnan, Dileep   |  收藏  |  浏览/下载：47/0  |  提交时间：2019/12/18 2-DIMENSIONAL ELECTRON GASES  LAALO3/SRTIO3 INTERFACE  MOBILITY  SUPERCONDUCTIVITY  COEXISTENCE  SURFACE   Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 18, 页码: 15943-15951 作者:  Zhou, Shujun;  Tang, Qngxin;  Tian, Hongkun;  Zhao, Xiaoli;  Tong, Yanhong   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/04/09 Organic Single Crystal  Field-effect Transistor  Mobility  Dielectric  Surface Energy  Polar Component  Dispersive Component   2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices 期刊论文  OAI收割 Advanced Materials, 2018, 卷号: 30, 期号: 47, 页码: 11 作者:  Zhang, J. L.;  Han, C.;  Hu, Z. H.;  Wang, L.;  Liu, L.   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/09/17 2D phosphorene  electronic devices  epitaxial growth  interface  engineering  layer black phosphorus  2-dimensional materials  band-gap  transport-properties  carrier mobility  blue phosphorus  graphene  surface  functionalization  semiconductors  Chemistry  Science & Technology - Other Topics  Materials Science  Physics   Breakdown of three-dimensional Dirac semimetal state in pressurized Cd3As2 期刊论文  OAI收割 PHYSICAL REVIEW B, 2015, 卷号: 91, 期号: 16, 页码: — 作者:  Zhang, S;  Wu, Q;  Schoop, L;  Ali, MN;  Shi, YG 收藏  |  浏览/下载：29/0  |  提交时间：2015/12/09 TOPOLOGICAL INSULATORS  LOW-TEMPERATURES  PHASE  MOBILITY  SURFACE  HEAT   Detection of nitrobenzene compounds in surface water by ion mobility spectrometry coupled with molecularly imprinted polymers 期刊论文  OAI收割 journal of hazardous materials, 2014, 卷号: 280, 期号: 1, 页码: 588-594 作者:  Lu, Wei;  Li, Haiyang;  Meng, Zihui;  Liang, Xixi;  Xue, Min 收藏  |  浏览/下载：48/0  |  提交时间：2015/11/16 Ion mobility spectrometry  Molecular imprinting  Nitrobenzene compounds  Surface water   Depth-dependent inhomogeneous characteristics in supported glassy polystyrene films revealed by ultra-low X-ray reflectivity measurements 期刊论文  OAI收割 POLYMER JOURNAL, 2014, 卷号: 46, 期号: 12, 页码: 873—879 Yang, CM; Ishimoto, K; Matsuura, S; Koyasu, N; Takahashi, I 收藏  |  浏览/下载：26/0  |  提交时间：2015/03/13 THIN POLYMER LAYERS  TRANSITION TEMPERATURES  MOLECULAR-WEIGHT  DYNAMICS  INTERFACE  SURFACE  MOTION  CONFINEMENT  THICKNESS  MOBILITY   Organogel-based Thin Films for Self-Cleaning on Various Surfaces 期刊论文  OAI收割 ADVANCED MATERIALS, 2013, 卷号: 25, 期号: 32, 页码: 4477-4481 作者:  Liu, Hongliang;  Zhang, Pengchao;  Liu, Mingjie;  Wang, Shutao;  Jiang, Lei   |  收藏  |  浏览/下载：19/0  |  提交时间：2019/04/09 Organogels  Self-cleaning  Droplet Mobility  Surface Chemistry   Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer 期刊论文  OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 471 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; He, T; Peng, MZ; Luo, WJ; Liu, XY; Wang, L; Jia, HQ; Chen, H 收藏  |  浏览/下载：43/0  |  提交时间：2013/09/17 ELECTRON-MOBILITY TRANSISTORS  SURFACE PASSIVATION  HETEROSTRUCTURES  SAPPHIRE  LEAKAGE  GROWTH   Weak Epitaxy Growth of Phthalocyanine on Inducing Layers of Fluorinated 5,5 ''-Bis(biphenyl-4-yl)-2,2 ':5 ',2 ''-terthiophene 期刊论文  OAI收割 journal of physical chemistry b, 2012, 卷号: 116, 期号: 6, 页码: 1812-1818 Qiao XL; Huang LZ; Zhang JD; Tian HK; Geng YH; Yan DH 收藏  |  浏览/下载：28/0  |  提交时间：2013/06/08 THIN-FILM TRANSISTORS  FIELD-EFFECT TRANSISTORS  HIGH-PERFORMANCE  SURFACE  SEMICONDUCTORS  MOBILITY  SIZE  DEPOSITION   Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文  OAI收割 2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China Yang X.; Su S.; Yi X.; Mei T. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.