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	Tunable nanogap devices for ultra-sensitive electrochemical impedance biosensing 期刊论文 OAI收割 ANALYTICA CHIMICA ACTA, 2016, 卷号: 905, 期号: 无, 页码: 58-65 作者: Lu, Yong; Guo, Zheng; Song, Jing-Jing; Huang, Qin-An; Zhu, Si-Wei 收藏 \| 浏览/下载：25/0 \| 提交时间：2017/10/25 Tunable Nanogap Devices Streptavidin Electrochemical Impedance Ultra-sensitive Electron-transfer Resistance
	Color Tuning via Adjusting the Dye-Loading Capacity of a Polymer 期刊论文 OAI收割 LANGMUIR, 2009, 卷号: 25, 期号: 8, 页码: 4352-4355 Hu W; Lu N; Shi SL; Wang YD; Wang Y; Cui ZC; Huang XH; Liu Y; Xu MJ; Chi LF 收藏 \| 浏览/下载：15/0 \| 提交时间：2010/06/22 LIGHT-EMITTING DEVICES TUNABLE EMISSION ELECTROLUMINESCENT DEVICES MULTICOLOR EMISSION CRYSTAL-LATTICE CARBON-DIOXIDE BLENDS QUINACRIDONES NANOMATERIALS POLYETHYLENE
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	Dielectric properties of Si-Ba0.5Sr0.5TiO3 composite thin films elaborated by pulsed laser deposition 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2005, 卷号: 98, 期号: 3 Cao, LZ; Cheng, BL; Wang, SY; Zhou, YL; Jin, KJ; Lu, HB; Chen, ZH; Yang, GZ 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/09/17 TUNABLE MICROWAVE DEVICES BARIUM STRONTIUM-TITANATE ENHANCED TUNABILITY IMPROVEMENT
	Preparation, microstructure and dielectric properties of Bao(0.5)Sr(0.5)TiO(3) thin films grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition 期刊论文 OAI收割 MATERIALS LETTERS, 2004, 卷号: 58, 期号: 27-28, 页码: 3591 Zhu, XH; Zheng, DN; Peng, W; Zhu, JG; Yuan, XW; Li, J; Zhang, MJ; Chen, YF; Tian, HY; Xu, XP 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/09/24 TUNABLE MICROWAVE APPLICATIONS BUFFER LAYER TUNABILITY OXYGEN DEVICES MEMORY (BA
	Novellest research on ferroelectric BaxSr1-xTiO3 thin films 期刊论文 OAI收割 JOURNAL OF INORGANIC MATERIALS, 2003, 卷号: 18, 期号: 5, 页码: 989 Zhu, XH; Zhu, JG; Zheng, DN; Li, L 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/24 CHEMICAL-VAPOR-DEPOSITION BARIUM STRONTIUM-TITANATE MICROWAVE PHASE SHIFTERS DIELECTRIC RESPONSE ELECTRICAL-PROPERTIES LAYER THICKNESS TUNABLE DEVICES LASER-ABLATION SR)TIO3 FILMS ELECTRODES