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	A Model of Spray Tool and a Parameter Optimization Method for Spraying Path Planning 期刊论文 OAI收割 International Journal of Automation and Computing, 2021, 卷号: 18, 期号: 6, 页码: 1017-1031 作者: Ruxiang Hua; Wei Zou; Guodong Chen; Hongxuan Ma; Wei Zhang \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2023/07/04 Digital camouflage spraying robot path optimization parameter setting coating thickness uniformity
	Effect of thickness non-uniformity of large-area grating metal film on grating diffraction wavefront 期刊论文 OAI收割 Optics and Laser Technology, 2019, 卷号: 119, 页码: 6 作者: X.T.Mi; S.W.Zhang; X.D.Qi; H.Z.Yu; J.X.Zhou \| 收藏 \| 浏览/下载：30/0 \| 提交时间：2020/08/24 Gratings,Metal film thickness non-uniformity,Grating diffraction,wavefront error,echelle gratings,error,resolution,Optics,Physics
	Thickness Uniformity Adjustment of Inkjet Printed Light-emitting Polymer Films by Solvent Mixture 期刊论文 OAI收割 CHINESE JOURNAL OF CHEMISTRY, 2013, 卷号: 31, 期号: 11, 页码: 1449-1454 作者: Xing, Rubo; Ye, Tengling; Ding, Yan; Ding, Zicheng; Ma, Dongge \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/04/09 Inkjet Printing Solvent Mixtures Thickness Uniformity Organic Light-emitting Diodes Marangoni Flow Coffee Ring Effect
	Design of broadband dielectric coatings for near-infrared Fabry-Perot interferometer 会议论文 OAI收割 Chengdu, China, 2007-7-8 作者: Cui xiangqun; Mao weijun; Wang jinfeng 收藏 \| 浏览/下载：34/0 \| 提交时间：2013/12/29 Fabry-Perot interferometer Broadband reflective coating Surface flatness Film thickness uniformity
	Automatic spin coater for concave spherical substrate (EI CONFERENCE) 会议论文 OAI收割 3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, July 8, 2007 - July 12, 2007, Chengdu, China Fengchao L.; Jingsong G.; Xiaoguo F.; Jingli Z.; Zhijun X.; Jun H.; Fenglin X.; Huiqing W.; Xiaohan L. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 Coating photoresist film with uniform thickness on concave spherical substrate (CSS) is very important for microfabrication of concave spherical optical elements by lithography technique via a laser direct writer for the uneven photoresist film will result in ununiformity of line width so as to influence the characters of optical elements. For improving the uniformity of photoresist film coating on CSS an automatic spin coater was designed. The process and the mathematical model of spin coating for CSS were analyzed. Difficulties for realizing the spin coater consist of the control of multi-axis motion precisely and collaboratively valves on/ff properly and real-timely. A flexible and well-behaved spinning motion system was achieved by tmeans of principal and subordinate CPUs control. The motion program for spin coating could be created and implemented automatically while the pressure and the valves were was watched and controlled in real time. Film coating and laser direct writing experiments on a CSS with aperture equals to 100 mm and radius equals to 370 mm were performed. Photoresist film with uniform thickness on CSS was obtained by selecting proper spin coating parameters such as rotational speed acceleration and viscosity of the photoresist. After development the section analysis by the atomic force microscope showed that photoresist film thickness was about 517 nm in the center and about 520 nm in the edge of substrate the film thickness error was within 1% and the line width was about 6.0 m with steep sides parallel each other. Experimental results indicate that uniform thickness of thin photoresist film has been coated on CSS by the spin coater which contributes to quality improvement of laser direct writing lines on CSS.
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.