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	A comparison of methods to harmonize cortical thickness measurements across scanners and sites 期刊论文 OAI收割 NEUROIMAGE, 2022, 卷号: 261, 页码: 19 作者: Sun, Delin; Rakesh, Gopalkumar; Haswell, Courtney C.; Logue, Mark; Baird, C. Lexi \| 收藏 \| 浏览/下载：53/0 \| 提交时间：2023/01/06 Data Harmonization Scanner Effects Site Effects Cortical Thickness ComBat ComBat-GAM Linear Mixed-Effects Model General Additive Model PTSD
	Monte carlo simulation of biological shielding parameters in pgnaa 期刊论文 iSwitch采集 Micro & nano letters, 2018, 卷号: 13, 期号: 4, 页码: 457-460 作者: Yang, Jianbo; Peng, Kexin; Qiao, Yujie; Zhang, Can; Li, Rui 收藏 \| 浏览/下载：77/0 \| 提交时间：2019/04/23 Monte carlo methods Radiation protection Neutron activation analysis Spontaneous fission Lead Boron compounds Lithium compounds Neutron absorption Multilayers Composite material interfaces Biological effects of gamma-rays Monte carlo simulation Biological shielding parameters Pgnaa Prompt neutron activation analysis Cf-252 spontaneous fission neutron Optimised radiation protection design parameters Mcnp monte carlo code Lead shield thickness Sample chamber Neutron-absorbing materials Biological multilayer composite shield Thick pb innermost layer Moderation layer Thick paraffin Thick borax Pgnaa facility Size 2 mm to 25 cm Pb B4c B2o3 Lioh Lif
	Monte Carlo simulation of biological shielding parameters in PGNAA 期刊论文 OAI收割 MICRO & NANO LETTERS, 2018, 卷号: 13, 期号: 4, 页码: 457-460 作者: Li, R; Yang, JB; Peng, KX; Qiao, YJ; Zhang, C \| 收藏 \| 浏览/下载：60/0 \| 提交时间：2019/09/24 Monte Carlo methods radiation protection neutron activation analysis spontaneous fission lead boron compounds lithium compounds neutron absorption multilayers composite material interfaces biological effects of gamma-rays Monte Carlo simulation biological shielding parameters PGNAA prompt neutron activation analysis Cf-252 spontaneous fission neutron optimised radiation protection design parameters MCNP Monte Carlo code lead shield thickness sample chamber neutron-absorbing materials biological multilayer composite shield thick Pb innermost layer moderation layer thick paraffin thick borax PGNAA facility size 2 mm to 25 cm Pb B4C B2O3 LiOH LiF
	Structure and thickness-dependent gas sensing responses to NO2 under UV irradiation for the multilayered ZnO micro/nanostructured porous thin films 期刊论文 OAI收割 JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2017, 卷号: 503, 期号: 无, 页码: 150-158 作者: Su, Xingsong; Duan, Guotao; Xu, Zongke; Zhou, Fei; Cai, Weiping 收藏 \| 浏览/下载：31/0 \| 提交时间：2018/06/04 Multilayered Micro/nanostructured Porous Thin Films Uv Irradiation Gas Sensing Responses Effects Of Porous Structure And Film Thickness
	Effects of site conditions on earthquake ground motion and their applications in seismic design in loess region 期刊论文 OAI收割 Journal of Mountain Science, 2017, 卷号: 14, 期号: 6, 页码: 1185-1193 作者: WANG Lan-min; WU Zhi-jian; XIA Kun \| 收藏 \| 浏览/下载：18/0 \| 提交时间：2017/06/21 Loessial Site Field Investigation Ground Motion Observation Micro Tremor Observation Loess Topography Loess Thickness Site Effects Seismic Design
	Transparent YAG:Ce ceramics for WLEDs with high CRI: Ce3+ concentration and sample thickness effects 期刊论文 OAI收割 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6935-6941 作者: Hu, Song; Lu, Chunhua; Zhou, Guohong; Liu, Xiaoxia; Qin, Xianpeng 收藏 \| 浏览/下载：26/0 \| 提交时间：2017/02/27 Transparent ceramic Ce3+ concentration Thickness effects CRI
	Epitaxial growth of Mn-Co-Ni-O thin films and thickness effects on the electrical properties 期刊论文 OAI收割 Materials Letters, 2014, 卷号: 130, 期号: 9, 页码: 127-130 作者: Ji, Guang; Chang, Aimin; Li, Hongyi; Xie, Yahong; Zhang, Huimin 收藏 \| 浏览/下载：22/0 \| 提交时间：2014/11/11 Thin films Epitaxial growth Electrical properties Negative temperature coefficient thermistor Thickness effects
	Athermalization of coaxial reflective space telescope (EI CONFERENCE) 会议论文 OAI收割 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Large Mirrors and Telescopes, April 26, 2010 - April 29, 2010, Dalian, China Lei Z.; Guang J. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 This paper focuses on thermal effects which caused by environmental temperature changes on coaxial reflective space telescope and its solution. Curvature radius and center thickness of optical elements and the space distance between optical elements may be changed by thermal effects. And the optical performance of the telescope may be impacted. Based on the analysis of thermal effects on coaxial reflective space telescope athermalized design techniques are emphatically presented the advantages and the disadvantages of the three athermalizations used currently are compared in the paper. The feasibility and effectiveness are verified by an example of a cassegrain space telescope. 2010 Copyright SPIE - The International Society for Optical Engineering.
	Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.