机构

• 物理研究所 [1]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 宁波材料技术与工程研... [1]
• 化学研究所 [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2018 [3]
• 2013 [1]
• 2007 [1]

学科主题

• Chemistry,... [1]
• Materials ... [1]
• Materials ... [1]
• Nanoscienc... [1]
• Polymer Sc... [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics 期刊论文  OAI收割 ADVANCED SCIENCE, 2018, 卷号: 5, 期号: 5, 页码: - 作者:  Chen, YY;  Sun, Y;  Zhu, QB;  Wang, BW;  Yan, X   |  收藏  |  浏览/下载：37/0  |  提交时间：2018/12/25 carbon nanotubes  flexible electronics  photosensitive dry films  thin-film transistors  transparent electronics   Self-aligned photolithography for the fabrication of fully transparent high-voltage devices 期刊论文  iSwitch采集 Journal of physics d: applied physics, 2018, 卷号: 51, 期号: 17 作者:  Zhang,Yonghui;  Mei,Zengxia;  Huo,Wenxing;  Wang,Tao;  Liang,Huili 收藏  |  浏览/下载：51/0  |  提交时间：2019/05/09 High-voltage  Self-aligned  Thin film transistors  Diodes  Inverters  Transparent   A Memory Structure with Different Control Gates 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 7 作者:  Song, Zhitang;  Guan, Jianmin;  Dai, Mingzhi   |  收藏  |  浏览/下载：34/0  |  提交时间：2018/12/04 Thin-film Transistors  Solar-cells  Tin  Temperature  Transparent  Performance   Transparent organic thin-film transistors based on high quality polycrystalline rubrene film as active layers 期刊论文  OAI收割 ORGANIC ELECTRONICS, 2013, 卷号: 14, 期号: 4, 页码: 1052-1056 作者:  Qian, Xianrui;  Wang, Tong;  Yan, Donghang   |  收藏  |  浏览/下载：20/0  |  提交时间：2019/04/09 Transparent Thin-film Transistors  Weak Epitaxy Growth  Polycrystalline Rubrene Film  High Performance   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.