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	Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文 OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者: X.-H.Xie; B.-H.Li; Z.-Z.Zhang; L.Liu; K.-W.Liu \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide
	One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices 期刊论文 OAI收割 CRYSTALS, 2018, 卷号: 8, 期号: 5, 页码: - 作者: Ding, M; Guo, Z; Zhou, LQ; Fang, X; Zhang, LL \| 收藏 \| 浏览/下载：43/0 \| 提交时间：2018/09/06 Zno Nanowire Arrays Light-emitting Diode Nanorods/meh-ppv Heterostructure Flame Transport Approach Electrochemical Deposition Field-emission Ultraviolet Electroluminescence Ag Nanoparticles Enhanced Photoresponse Hydrothermal Growth
	Study on the Photoresponse Characteristics of Organic Light Emitting Field-Effect Transistors 期刊论文 OAI收割 Journal of Physical Chemistry C, 2018, 卷号: 122, 期号: 27, 页码: 15190-15197 作者: Li, D. W.; Hu, Y. S.; Guo, X. Y.; Lv, Y.; Zhang, N. \| 收藏 \| 浏览/下载：8/0 \| 提交时间：2019/09/17 thin-film transistors up-conversion devices phototransistors performance photodetectors ultraviolet graphene gain electroluminescence transport
	Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文 OAI收割 physica status solidi(c) current topics in solid state physics, Physica Status Solidi(C) Current Topics in Solid State Physics, 2011, 2011, 卷号: 8, 8, 期号: 2, 页码: 461-463, 461-463 作者: \| 收藏 \| 浏览/下载：50/0 \| 提交时间：2012/06/14 Atomic force microscopy Diffraction Electroluminescence Gallium Metallorganic chemical vapor deposition Organic chemicals Organic light emitting diodes(OLED) Organometallics Structure(composition) Ultraviolet radiation X ray diffraction Atomic Force Microscopy Diffraction Electroluminescence Gallium Metallorganic Chemical Vapor Deposition Organic Chemicals Organic Light Emitting Diodes(Oled) Organometallics Structure(Composition) Ultraviolet Radiation x Ray Diffraction
	Study on the Electron Overflow in 264 nm AlGaN Light-Emitting Diodes 期刊论文 OAI收割 IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 卷号: 46, 期号: 12, 页码: 1854-1859 Zhang JC (张纪才); Sakai Y; Egawa T 收藏 \| 浏览/下载：197/62 \| 提交时间：2010/12/30 AlGaN deep ultraviolet light-emitting diodes band diagram electroluminescence electron overflow semiconductor diodes
	Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 OAI收割 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.