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浏览/检索结果: 共16条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Facile fabrication of 3D flower-like V2Al1-xCTz as an anode for lithium-ion batteries 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 卷号: 908, 页码: 10 作者:  Liu, Rui Jia;  Yang, Ling Xu;  Lin, Guang Qiang;  Zhang, Tian Yu;  Bu, Huan Peng   |  收藏  |  浏览/下载：44/0  |  提交时间：2022/07/14 V2AlC  Molten salt  Flower-like V(2)Al(1-x)CTz  Lithium-ion batteries  Anode   Optical spectroscopy of the be/x-ray binary v850 centauri/gx 304-1 during faint x-ray periodical activity 期刊论文  iSwitch采集 Astronomy & astrophysics, 2017, 卷号: 603, 页码: 7 作者:  Malacaria, C.;  Kollatschny, W.;  Whelan, E.;  Santangelo, A.;  Klochkov, D. 收藏  |  浏览/下载：26/0  |  提交时间：2019/04/23 Stars: individual: v850 cen  Stars: individual: gx 304-1  Stars: emission-line, be  Stars: neutron  X-rays: binaries   Optical spectroscopy of the Be/X-ray binary V850 Centauri/GX 304-1 during faint X-ray periodical activity 期刊论文  OAI收割 ASTRONOMY & ASTROPHYSICS, 2017, 卷号: 603, 页码: A24 作者:  Klochkov, D;  Whelan, E;  Kollatschny, W;  Malacaria, C;  Ducci, L   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/08/27 stars: individual: V850 Cen  stars: individual: GX 304-1  stars: emission-line, Be  stars: neutron  X-rays: binaries   一种缓释型青霉素阴离子插层水滑石材料及其制备和应用 专利  OAI收割 专利类型: 发明, 专利号: CN201110290535.3, 申请日期: 2012-06-20, 公开日期: 2012-06-20 作者:  王毅 收藏  |  浏览/下载：46/0  |  提交时间：2014/08/04 一种缓释型青霉素阴离子插层水滑石材料  M3+为Al3+  M2+/M3+的摩尔比为1.6～4.5  0.2≤x≤0.4。  其特征在于：所述水滑石材料化学组成通式为[M2+1?xM3+x(OH)2]x+(C16H17N2O4S?)x·nH2O  Cr3+  M2+为Mg2+  Fe3+  Zn2+  V3+  Ni2+  Co3+  Fe2+或Mn2+的二价金属离子  Ga3+或Ti3+的三价金属离子   Effect of adding Cr on magnetic properties and metallic behavior in MnTe film (EI CONFERENCE) 会议论文  OAI收割 作者:  Li J.;  Li J.;  Li J. 收藏  |  浏览/下载：44/0  |  提交时间：2013/03/25 Mn1 - xCrxTe films with x = 0  0.02  and 0.05 was synthesized by pulsed laser deposition and crystallize in hexagonal NiAs-type structure. The spin glass behavior predicted before by Monte Carlo calculation is observed in the MnTe film. This behavior is destroyed by adding Cr in the MnTe film. The temperature dependence of magnetization shows a sharp rise at around 66 K  due to the magneto-elastic coupling. Metallic behavior is observed in the MnTe film in the temperature range 120-220 K  which is ascribed to the magnetic ordering. The metallic behavior disappears with adding Cr  because adding Cr ions destroys the magnetic ordering which is mediated by the sp-d exchange interaction between the Cr ions. 2012 Elsevier B.V.   一种缓释型苯甲酸根阴离子插层水滑石碳钢防腐蚀材料及其制备和应用 专利  OAI收割 专利类型: 发明, 专利号: CN201110041730.2, 申请日期: 2011-08-03, 公开日期: 2011-08-03 作者:  王毅 收藏  |  浏览/下载：39/0  |  提交时间：2014/08/04 一种缓释型苯甲酸根阴离子插层水滑石碳钢防腐蚀材料  M2+/M3+的摩尔比为1.6～4.5  0.2≤x≤0.4。  其特征在于：所述防腐蚀材料化学组成通式为[M2+1?xM3+x(OH)2]x+(C6H5COO?)x·nH2O  M2+代表二价金属离子Mg2+  Zn2+  Ni2+  Fe2+  Mn2+中的任何一种  M3+代表三价金属离子Al3+  Cr3+  Fe3+  V3+  Co3+  Ga3+  Ti3+中的任何一种   磷嗪对Ti6Al4V/钢摩擦副摩擦磨损性能的影响 期刊论文  OAI收割 润滑与密封, 2010, 卷号: 35, 期号: 7, 页码: 86-90 作者:  王芳;  毕秦岭 收藏  |  浏览/下载：25/0  |  提交时间：2012/09/28 磷嗪  Ti6Al4V/钢摩擦副  摩擦磨损性能  X-1P  Ti6Al4V-steel pair  friction and wear performance   Color videos' multichannel combination for bandwidth reduction and fast frequency domain processing (EI CONFERENCE) 会议论文  OAI收割 2nd International Workshop on Education Technology and Computer Science, ETCS 2010, March 6, 2010 - March 7, 2010, Wuhan, Hubei, China 作者:  Li S. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 The real color video consumes much transfer bandwidth and the resource of the hardware. A new approach is introduced to process the real color video images in real-time using color components combination to fit to the limited transmission bandwidth. The Y  U  V planes of video images are packed to construct a 2 dimensional complex array. Through the decomposition of frequency domain  the Y  U  V frequency can be got respectively by performing Fourier transform a time on the specific complex array. These frequencies can be filtered to generate the final filtered images. The experiment results show that the proposed algorithm is 3X speed compared to the traditional algorithm  and it reduces 1/3 bandwidth of video data stream. 2010 IEEE.   多通道柔性神经微电极加工工艺 期刊论文  OAI收割 光学精密工程, 2009, 期号: 10 邢玉梅; 惠春; 徐爱兰; 李刚; 赵建龙; 任秋实 收藏  |  浏览/下载：12/0  |  提交时间：2012/01/06 锂离子电池  Li(NiuCovMn1-u-v)O2  原子混合占位  X射线衍射   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.