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	A Real-Time Disruption Prediction Tool for VDE on EAST 期刊论文 OAI收割 IEEE TRANSACTIONS ON PLASMA SCIENCE, 2020, 卷号: 48 作者: Bao, N. N.; Huang, Y.; Xiao, B. J.; Yuan, Q. P.; Zhuang, H. D. \| 收藏 \| 浏览/下载：54/0 \| 提交时间：2020/11/26 Real-time systems Tokamak devices Mathematical model Tools Graphics processing units Force Alarm disruption prediction tool experimental advanced superconducting tokamak (EAST) plasma control system (PCS) real-time vertical growth rate
	Polarization stabilized VCSELs by displacement Talbot lithography-defined surface gratings 期刊论文 OAI收割 Optik, 2019, 卷号: 183, 页码: 579-585 作者: Y.Y.Liu; X.Zhang; Y.W.Huang; J.W.Zhang; W.Hofmann \| 收藏 \| 浏览/下载：50/0 \| 提交时间：2020/08/24 Vertical cavity surface emitting lasers,Semiconductor lasers,Gratings,Polarization-selective devices,fundamental-mode,design,Optics
	Graphene Oxide as a Monoatomic Blocking Layer 期刊论文 OAI收割 ACS NANO, 2012, 卷号: 6, 期号: 9, 页码: 8022-8029 作者: Petersen, Soren; Glyvradal, Magni; Boggild, Peter; Hu, Wenping; Feidenhans'l, Robert \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2019/04/09 Graphene Oxide Molecular Electronics Vertical Devices Barrier Layer Molecular Interfacing X-ray Reflectivity
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：17/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current which is very favorable for focusing or collmating optics.