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MARS: A protein family involved in the formation of vertical skeletal elements 期刊论文  OAI收割
JOURNAL OF STRUCTURAL BIOLOGY, 2017, 卷号: 198, 期号: 2, 页码: 92-102
作者:  
Abehsera, Shai;  Peles, Shani;  Tynyakov, Jenny;  Bentov, Shmuel;  Aflalo, Eliahu D.
  |  收藏  |  浏览/下载:38/0  |  提交时间:2017/07/10
Dominants and accumulation of rare earth elements in sediments derived from riparian and depressional marshes 期刊论文  OAI收割
ENVIRONMENTAL EARTH SCIENCES, 2011, 卷号: 62, 期号: 1, 页码: 207-216
作者:  
Wang GP (Wang, Guo-Ping)[1,2];  Zhao HM (Zhao, Hong-Mei)[1];  Yu XF (Yu, Xiao-Fei)[1,2];  Wang JA (Wang, Jian)[1]
  |  收藏  |  浏览/下载:21/0  |  提交时间:2019/01/07
Large component QCD and theoretical framework of heavy quark effective field theory 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF MODERN PHYSICS A, 2006, 卷号: 21, 期号: 28-29, 页码: 5743-5792
作者:  
Wu, YL , Chinese Acad Sci, Inst Theoret Phys, Beijing 100080, Peoples R China;  Wu, Yue-Liang
  |  收藏  |  浏览/下载:18/0  |  提交时间:2012/08/02
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.  
High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者:  
Sun Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:21/0  |  提交时间:2013/03/25
High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载:13/0  |  提交时间:2013/03/25
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.  
HQEFT as a large component QCD and comments on the incompleteness of HQET 期刊论文  OAI收割
MODERN PHYSICS LETTERS A, 2003, 卷号: 18, 期号: 19, 页码: 1303-1316
作者:  
Wu, YL;  Yan, YA;  Zhong, M;  Zuo, YB;  Wang, WY
  |  收藏  |  浏览/下载:14/0  |  提交时间:2012/08/29
Vertical transferring process of rare elements in coral reef lagoons of Nansha Islands, South China Sea 期刊论文  OAI收割
SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 1998, 卷号: 41, 期号: 1, 页码: 42-48
作者:  
Song, JM;  Li, PC
  |  收藏  |  浏览/下载:16/0  |  提交时间:2010/12/22