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	KW-output high beam quality diode laser array source (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China 作者: Zhang J.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：41/0 \| 提交时间：2013/03/25 With the advantages of small volume light weight high efficiency and long lifespan diode laser has been widely applied to industrial processing. Presently for laser used as processing light source needs to amount to dozens of KW per cm2 of power density how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing 808nm laser array composed of 20 bars eventually achieves the 1001.5w power output coupling efficiency at 90% 11mm2 of light spot through experiments which enables diode laser to be directly applied to cladding welding and so on. 2012 IEEE.
	Experiment analysis of CO2 laser disturbance on long-wave infrared HgCdTe detector (EI CONFERENCE) 会议论文 OAI收割 2011 International Conference on Electric Information and Control Engineering, ICEICE 2011, April 15, 2011 - April 17, 2011, Wuhan, China 作者: Wang S.-W. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Theoretical analysis and experimental study were carried out on the high-power CO2 laser disturbance to long-wave infrared (LWIR) HgCdTe detector in this paper. Based on the practical parameters of experiment the theoretical model of temperature-rise is adopted to calculate the variation of the temperature with the time and the power of laser for laser irradiation on the detector. After that the damage threshold is 110W/cm2. This experimental phenomenon well agrees with the results predicted by the theoretical calculation. The conclusions have a certain reference value for the laser defense of detector. 2011 IEEE. the high-power laser damage mechanism to LWIR detector is discussed and compares with the experimental results of laser irradiation the detector on the distance of 15km. The theoretical and experimental results demonstrate that the interference threshold of the detector is 20.5W/cm 2
	Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文 OAI收割 High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China 作者: Li D. 收藏 \| 浏览/下载：64/0 \| 提交时间：2013/03/25 It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz the upmost output power of single pulse is up to level of 1W which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal when polarization of laser beam rotates 4.5 the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	Using one-dimensional nonlinear photonic crystal for dynamical addressing optical interconnection (EI CONFERENCE) 会议论文 OAI收割 ICO20: Optical Information Processing, August 21, 2005 - August 26, 2005, Changchun, China 作者: Li C.; Wang W.; Wang W.; Li C.; Li C. 收藏 \| 浏览/下载：38/0 \| 提交时间：2013/03/25 Optical interconnection is the key technique of high-speed optical information process and optical communication. A lot of approaches for optical interconnection have been proposed since Goodman in Stanford University firstly proposed the optical interconnection for very large scale integrated circuits technology. A dynamical addressing device for optical interconnection was designed and fabricated in this paper. This optical device is based on one-dimensional nonlinear photonic crystal made on the planar waveguide. The nonlinear materials ZnS and ZnSe which have large nonlinear refractive index coefficients were alternately deposited on the waveguide to form one-dimensional photonic crystal. The Bragg condition is changed when the input power of the control light increased due to the nonlinear characters of the materials thus the reflective angle of the signal light can be changed with the input power change of the control light. In our experiment when increasing the power density of control light from 0 to 2.60X105W/cm 2 the angle of the signal beam can be changed about 20. The interconnection characteristics were investigated in theory and in experiment. The testing data agree well with theoretical predictions. This kind of devices is promising to use in the all-optical interconnection optical information processing and optical communication.
	Measurements of angular distribution and energy spectrum of hot electrons 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 10, 页码: 5349 Zhi-Yuan, Z; Li, YT; Yuan, XH; Xu, MH; Lang, WX; Yu, QZ; Zhang, Y; Wang, ZH; Wei, ZY; Zhang, J 收藏 \| 浏览/下载：20/0 \| 提交时间：2013/09/18 LASER-SOLID INTERACTIONS TARGETS ABSORPTION W/CM(2) PULSE
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.