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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共10条,第1-10条 帮助

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Breaking Consecutive Hydrogen-Bond Network Toward High-Rate Hydrous Organic Zinc Batteries 期刊论文  OAI收割
ADVANCED ENERGY MATERIALS, 2023, 页码: 9
作者:  
Cui, Changjun;  Han, Daliang;  Lu, Haotian;  Li, Zhiguo;  Zhang, Kangyu
  |  收藏  |  浏览/下载:13/0  |  提交时间:2024/01/07
Longitudinal Ultrasonic Vibration Assisted Rapid Solid Phase Bonding of 2024 Aluminum Alloy Using Ag as Interlayer for Structure Lightweight Design 期刊论文  OAI收割
METALS AND MATERIALS INTERNATIONAL, 2020
作者:  
Ning BQ;  Nie Y;  Wang Q;  Fu Y;  Li Y
  |  收藏  |  浏览/下载:41/0  |  提交时间:2020/12/28
New preparation method of micron porous copper through physical vacuum dealloying of Cu-Zn alloys 期刊论文  OAI收割
MATERIALS LETTERS, 2016, 卷号: 165, 页码: 1-4
Sun, Yuxia; Ren, Yibin; Yang, Ke
收藏  |  浏览/下载:27/0  |  提交时间:2016/04/21
Formation of interfacial compounds and the effects on stripping behaviors of a cold-sprayed Zn-Al coating on interstitial-free steel 期刊论文  OAI收割
Applied Surface Science, 2015, 卷号: 340, 页码: 89-95
Y. L.; Wang Liang, Z. B.; Zhang, J. B.; Lu, K.
收藏  |  浏览/下载:21/0  |  提交时间:2015/05/08
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  
Zhang T.
收藏  |  浏览/下载:34/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Enhanced reactive diffusion of Zn in a nanostructured Fe produced by means of surface mechanical attrition treatment 期刊论文  OAI收割
Acta Materialia, 2012, 卷号: 60, 期号: 4, 页码: 1762-1770
H. L. Wang; Z. B. Wang; K. Lu
收藏  |  浏览/下载:37/0  |  提交时间:2013/02/05
Effect of Zn Additions on the Oxidation of Cu-2 at.% Al and Cu-4 at.% Al Alloys in 1 atm O(2) at 800 A degrees C 期刊论文  OAI收割
Oxidation of Metals, 2009, 卷号: 71, 期号: 1-2, 页码: 43-61
F. Gao; F. Gesmundo; Y. Niu
收藏  |  浏览/下载:22/0  |  提交时间:2012/04/13
Electrochemical performance of Zn-substituted Ni(OH)(2) for alkaline rechargeable batteries 期刊论文  OAI收割
Journal of Solid State Electrochemistry, 2005, 卷号: 9, 期号: 6, 页码: 421-428
H. Chen; J. M. Wang; Y. L. Zhao; J. Q. Zhang; C. N. Cao
收藏  |  浏览/下载:18/0  |  提交时间:2012/04/14
Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文  OAI收割
applied physics letters, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879
Zhao YW; Dong HW; Chen YH; Zhang YH; Jiao JH; Zhao JQ; Lin LY; Fung S
收藏  |  浏览/下载:97/2  |  提交时间:2010/08/12
Analysis of Dopant distributions in LEC-InP 期刊论文  OAI收割
crystal research and technology, 1995, 卷号: 30, 期号: 8, 页码: 1169-1178
Wei J
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/17
DIFFUSION  GROWTH  ZN