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	Effects of Zn injection on corrosion behavior and crud deposition of FeCrAl fuel cladding under subcooled nuclear boiling condition in high-temperature pressurized water 期刊论文 OAI收割 CORROSION SCIENCE, 2023, 卷号: 211, 页码: 16 作者: Xue, Chaochao; Zhang, Ziyu; Tan, Jibo; Wu, Xinqiang; Han, En-Hou \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2023/05/09 FeCrAl fuel cladding Corrosion behavior Crud deposition Zn injection Subcooled nuclear boiling
	Corrosion release behavior of alloy 690 and its application in high-temperature water with Zn injection 期刊论文 OAI收割 NUCLEAR ENGINEERING AND TECHNOLOGY, 2022, 卷号: 54, 期号: 3, 页码: 984-990 作者: Liao, Jiapeng; Hu, Yousen; Li, Jinggang; Jin, Desheng; Meng, Shuqi \| 收藏 \| 浏览/下载：22/0 \| 提交时间：2022/07/01 Zn-injection Nickel-based alloy High-temperature water Corrosion release
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures 期刊论文 OAI收割 physical review b, 2002, 卷号: 65, 期号: 11, 页码: art.no.115209 Chang K; Xia JB; Peeters FM 收藏 \| 浏览/下载：212/41 \| 提交时间：2010/08/12 ELECTRICAL SPIN INJECTION ZNSE/ZN1-XMNXSE HETEROSTRUCTURE POLARIZED TRANSPORT QUANTUM-WELLS SCATTERING INTERFACE DEVICE