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	Self-powered solar-blind ultraviolet photodetector based on Au/ZnMgO/ZnO:Al with comb-shaped Schottky electrode 期刊论文 OAI收割 Sensors and Actuators a-Physical, 2019, 卷号: 295, 页码: 623-628 作者: C.Q.Zhou; K.W.Liu; Y.X.Zhu; J.L.Yang; X.Chen \| 收藏 \| 浏览/下载：20/0 \| 提交时间：2020/08/24 ZnMgO alloy,Self-Powered,Solar-blind photodetector,Comb-shaped,Schottky electrode,visible-blind,uv photodetector,responsivity,enhancement,Engineering,Instruments & Instrumentation
	基于高阶共振模式的金属表面等离子体增强型ZnO紫外探测器的制备和研究学位论文 OAI收割中国科学院大学(中国科学院长春光学精密机械与物理研究所): 中国科学院大学(中国科学院长春光学精密机械与物理研究所), 2018 作者: 王潇 \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2019/09/23 ZnMgO 表面等离极化激元 MBE 波长选择性日盲探测器
	ZnMgO合金材料的MOCVD生长及物性研究学位论文 OAI收割博士, 北京: 中国科学院研究生院, 2010 杨安丽收藏 \| 浏览/下载：270/30 \| 提交时间：2010/04/07 ZnMgO MOCVD 纳米结构异质结价带差
	Localized-surface-plasmon enhanced the 357 nm forward emission from znmgo films capped by pt nanoparticles 期刊论文 iSwitch采集 Nanoscale research letters, 2009, 卷号: 4, 期号: 10, 页码: 1121-1125 作者: You, J. B.; Zhang, X. W.; Dong, J. J.; Song, X. M.; Yin, Z. G. 收藏 \| 浏览/下载：17/0 \| 提交时间：2019/05/12 Znmgo films Photoluminescence Localized surface plasmon Nanoparticles
	Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles 期刊论文 OAI收割 nanoscale research letters, 2009, 卷号: 4, 期号: 10, 页码: 1121-1125 作者: You JB; Yin ZG; Zhang XW 收藏 \| 浏览/下载：39/0 \| 提交时间：2010/03/08 ZnMgO films Photoluminescence Localized surface plasmon Nanoparticles
	Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文 OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China 作者: Zhang J.; Li B.; Li B.; Li B.; Zhao Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 In recent years ZnMgO semiconductor alloys with a direct bandgap tunable between 3.37 eV and 7.8 eV become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m 5 m and 10 m respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns 170 ns and 230 ns for the devices with different finger pitches of 2 m 5 m and 10 m respectively..
	立方相ZnMgO的电学特性研究会议论文 OAI收割第十四届全国化合物半导体材料、微波器件和光电器件学术会议, 2006 金国芬; 梁军; 吴惠桢; 劳燕锋; 余萍; 徐天宁收藏 \| 浏览/下载：28/0 \| 提交时间：2012/01/18 ZnMgO合金薄膜立方相宽带隙半导体材料漏电性能电学性能 ZnMgO纳米薄膜 MIS结构
	ZnMgO纳米薄膜在MOSFET和透明TFT中的应用学位论文 OAI收割博士: 中国科学院研究生院（上海微系统与信息技术研究所） , 2006 梁军收藏 \| 浏览/下载：51/0 \| 提交时间：2012/03/06 ZnMgO 高κ材料宽禁带半导体 MOSFET 薄膜晶体管