机构

• 青藏高原研究所 [1]
• 长春光学精密机械与物... [1]
• 上海技术物理研究所 [1]

采集方式

• OAI收割 [3]

内容类型

• 期刊论文 [2]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2009 [1]
• 2005 [1]

学科主题

• 地球科学::大气科学 [1]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors 期刊论文  OAI收割 OPTICAL ENGINEERING, 2017, 卷号: 56, 期号: 5 作者:  Jin C;  Chen JX;  Xu QQ;  Yu CZ;  He L   |  收藏  |  浏览/下载：46/0  |  提交时间：2018/11/20 short-wavelength infrared  type II InGaAs/GaAsSb superlattice  quantum efficiency  absorption region thickness   Aerosol optical properties at Nam Co, a remote site in central Tibetan Plateau 期刊论文  OAI收割 ATMOSPHERIC RESEARCH, 2009, 卷号: 92, 期号: 1, 页码: 42-48 作者:  Kang SC(康世昌);  Cong ZY(丛志远) 收藏  |  浏览/下载：29/0  |  提交时间：2010/06/13 SKY RADIANCE MEASUREMENTS  AERONET  ANTARCTICA  ABSORPTION  THICKNESS  NETWORK  REGION  SEASON  DEPTH  SUN   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.