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	Three-peak top-emitting white organic emitting diodes with wide color gamut for display application 期刊论文 OAI收割 organic electronics, 2013, 卷号: 14, 期号: 7, 页码: 1898-1902 Fan Y; Zhang HM; Chen JS; Ma DG 收藏 \| 浏览/下载：24/0 \| 提交时间：2014/04/15 ACTIVE-MATRIX DISPLAYS DEVICES EFFICIENCY EMISSION CONTRAST FILTER
	Integration of Self-Assembled Redox Molecules in Flash Memory Devices 期刊论文 OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 卷号: 58, 期号: 3, 页码: 826-834 作者: Shaw, Jonathan; Zhong, Yu-Wu; Hughes, Kevin J.; Hou, Tuo-Hung; Raza, Hassan \| 收藏 \| 浏览/下载：15/0 \| 提交时间：2019/04/09 Coulomb Blockade Effect High-kappa Dielectric Nonvolatile Memory Devices Reduction-oxidation (Redox)-active Molecules Self-assembled Monolayer (Sam)
	High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology the devices have been fabricated in experiment and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.
	High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.
	High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.
	Investigation progress on key photonic integration for application in optical communication network 期刊论文 iSwitch采集 Science in china series f-information sciences, 2003, 卷号: 46, 期号: 1, 页码: 60-66 作者: Wang, QM 收藏 \| 浏览/下载：24/0 \| 提交时间：2019/05/12 Optical network Photonic integration Active devices Passive devices
	Investigation progress on key photonic integration for application in optical communication network 期刊论文 OAI收割 science in china series f-information sciences, 2003, 卷号: 46, 期号: 1, 页码: 60-66 Wang QM 收藏 \| 浏览/下载：67/0 \| 提交时间：2010/08/12 optical network photonic integration active devices passive devices