机构

• 长春光学精密机械与物... [2]
• 半导体研究所 [2]

采集方式

• OAI收割 [3]
• iSwitch采集 [1]

内容类型

• 会议论文 [2]
• 期刊论文 [2]

发表日期

• 2010 [1]
• 2005 [1]
• 1999 [2]

学科主题

• 半导体材料 [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Fabrication and photoluminescence of ZnS: Mn2+ nanowires/ZnO quantum dots/SiO2 heterostructure (EI CONFERENCE) 会议论文  OAI收割 作者:  Yang L.;  Wang D.;  Wang Y.;  Wang Y.;  Wang Y. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 In this paper  we demonstrated the encapsulation of ZnS: Mn2+ nanowires (NWs) and ZnO quantum dots (QDs) with a layer of mesoporous SiO 2 shell for the purpose of integrating dual emission property into one common nanostructure. The average diameter of ZnS: Mn2+ NWs  ZnO QDs  and ZnS: Mn2+ / ZnO@SiO2 heterostructure was about 10 nm  6 nm  and 22 nm  respectively. Within ZnS: Mn2+ / ZnO@SiO 2 nanocomposites  the intensity of the yellow-orange emission contributed by ZnS: Mn2+ NWs and the UV emission contributed by ZnO QDs was three and ten times higher than their individual components  respectively. The fluorescence intensity ratio of the dual emission can be tuned by adjusting the hydrolysis time of tetraethyl orthosilicate. The peak energy of the yellow-orange and UV emission showed blueshift and redshift as increasing the temperature  respectively. The anomalous enhancement of the integrated intensity for the UV emission with the temperature indicated that the high surface state density existing in ZnO QDs can overrun the influence of temperature quenching and even alter the photoluminescent properties. 2010 American Institute of Physics.   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.   Fabrication of ingaas quantum dots with an underlying ingaalas layer on gaas(100) and high index substrates by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612 作者:  Jiang, WH;  Xu, HZ;  Xu, B;  Wu, J;  Ye, XL 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Quantum dots  Ingaas/ingaalas  Adjusting layer  Molecular beam epitaxy  High index   Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 607-612 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 quantum dots  InGaAs/InGaAlAs  adjusting layer  molecular beam epitaxy  high index  GAAS