中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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An improved threshold dynamics method for wetting dynamics 期刊论文  OAI收割
JOURNAL OF COMPUTATIONAL PHYSICS, 2019, 卷号: 392, 页码: 291-310
作者:  
Wang, Dong;  Wang, Xiao-Ping;  Xu, Xianmin
  |  收藏  |  浏览/下载:59/0  |  提交时间:2020/01/10
Angle-resolved photoelectron energy spectrum from the high-order above-threshold ionization process in IR plus XUV two-color laser fields 期刊论文  OAI收割
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2018, 卷号: 51, 期号: 24, 页码: 11
作者:  
Wang, Bingbing;  Liu, Xiaojun;  Chen, Jing;  Yang, Yujun;  Li, Fei
  |  收藏  |  浏览/下载:250/0  |  提交时间:2019/04/30
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 页码: 7
作者:  
Li, X;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载:18/0  |  提交时间:2015/12/31
Corner detection using Gabor filters 期刊论文  OAI收割
iet image processing, 2014, 卷号: 8, 期号: 11, 页码: 639-646
作者:  
Zhang, Wei-Chuan;  Wang, Fu-Ping;  Zhu, Lei;  Zhou, Zuo-Feng
收藏  |  浏览/下载:51/0  |  提交时间:2015/03/19
Theoretical research of an improved C-V method to measure the elastic constants of nematic liquid crystal (EI CONFERENCE) 会议论文  OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Kong X.; Jin H.; Huang X.; Liao Y.; Liu J. e.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Double-parameter threshold and its formation mechanism of the colluvial landslide: Xintan landslide, China 期刊论文  OAI收割
ENVIRONMENTAL GEOLOGY, 2006, 卷号: 49, 期号: 5, 页码: 696-707
作者:  
He, KQ;  Wang, SJ
  |  收藏  |  浏览/下载:17/0  |  提交时间:2018/09/26
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.