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	Estimation of the barrier layer thickness in the Indian Ocean based on hybrid neural network model 期刊论文 OAI收割 DEEP-SEA RESEARCH PART I-OCEANOGRAPHIC RESEARCH PAPERS, 2023, 卷号: 202, 页码: 14 作者: Zhao, Yizhi; Qi, Jifeng; Zhu, Shanliang; Jia, Wentao; Gong, Xiang \| 收藏 \| 浏览/下载：43/0 \| 提交时间：2024/04/07 Barrier layer thickness Particle swarm optimization Artificial neural networks Hybrid models
	Meta-learning-based estimation of the barrier layer thickness in the tropical Indian Ocean 期刊论文 OAI收割 ENVIRONMENTAL RESEARCH COMMUNICATIONS, 2023, 卷号: 5, 期号: 9, 页码: 8 作者: Qi, Jifeng; Qu, Tangdong; Yin, Baoshu \| 收藏 \| 浏览/下载：10/0 \| 提交时间：2023/11/30 Ocean barrier layer thickness Indian Ocean meta-learning machine learning
	Effects of monsoon onset vortex on heat budget in the mixed layer of the Bay of Bengal 期刊论文 OAI收割 JOURNAL OF OCEANOLOGY AND LIMNOLOGY, 2019, 卷号: 1, 期号: 1, 页码: 16 作者: Xu Kang; Liu Boqi; Liu Yu; Wang Weiqiang; He Zhuoqi \| 收藏 \| 浏览/下载：23/0 \| 提交时间：2020/03/16 monsoon onset vortex (MOV) Bay of Bengal air-sea interaction mixed layer depth barrier layer thickness heat budget analysis
	Effects of monsoon onset vortex on heat budget in the mixed layer of the Bay of Bengal 期刊论文 OAI收割 JOURNAL OF OCEANOLOGY AND LIMNOLOGY, 2019 作者: Xu Kang; Liu Boqi; Liu Yu; Wang Weiqiang; He Zhuoqi \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2020/09/04 monsoon onset vortex (MOV) Bay of Bengal air-sea interaction mixed layer depth barrier layer thickness heat budget analysis
	Assessment of Interannual Sea Surface Salinity Variability and Its Effects on the Barrier Layer in the Equatorial Pacific Using BNU-ESM CNKI期刊论文 OAI收割 2016 作者: Hai ZHI; Rong-Hua ZHANG; Fei ZHENG; Pengfei LIN; Lanning WANG \| 收藏 \| 浏览/下载：1/0 \| 提交时间：2024/12/18 feedback interannual variability sea surface salinity barrier layer thickness
	Assessment of Interannual Sea Surface Salinity Variability and Its Effects on the Barrier Layer in the Equatorial Pacific Using BNU-ESM 期刊论文 OAI收割 ADVANCES IN ATMOSPHERIC SCIENCES, 2016, 卷号: 33, 期号: 3, 页码: 339-351 作者: 收藏 \| 浏览/下载：24/0 \| 提交时间：2016/05/03 feedback interannual variability sea surface salinity barrier layer thickness
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.